MXP1007AT MOSFET. Datasheet pdf. Equivalent
Type Designator: MXP1007AT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 333 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 143 A
Maximum Junction Temperature (Tj): 175 °C
Drain-Source Capacitance (Cd): 600 pF
Maximum Drain-Source On-State Resistance (Rds): 0.007 Ohm
Package: TO220
MXP1007AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MXP1007AT Datasheet (PDF)
0.1. mxp1007at.pdf 
Size:582K _maxpower
MXP1007AT 100V N-ch Power MOSFET General Features BVDSS RDS(ON),max. ID[2] Proprietary New Trench Technology 100V 7.0m 143 RDS(ON),typ.=5.3m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification UPS Inverter Ordering Information Part Number Pa
8.1. mxp1008at.pdf Size:255K _maxpower
MXP1008AT100V N-Channel MOSFETApplications: Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 8m 115A High Efficiency Synchronous Rectification in SMPSFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessOrdering InformationPark Number
8.2. mxp1006at.pdf Size:232K _maxpower
MXP1006AT100V N-Channel MOSFETApplications: Uninterruptible Power Supply VDS RDS(ON)(MAX) ID High Speed Power Switching 100V 6m 155A High Efficiency Synchronous Rectification in SMPSFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS RuggednessOrdering InformationPark Number
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