All MOSFET. SM3381EHQG Datasheet

 

SM3381EHQG MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM3381EHQG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 14.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.5 nC
   trⓘ - Rise Time: 8.4 nS
   Cossⓘ - Output Capacitance: 73 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0205 Ohm
   Package: DFN3X3E-8

 SM3381EHQG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM3381EHQG Datasheet (PDF)

 ..1. Size:310K  sino
 sm3381ehqg.pdf

SM3381EHQG SM3381EHQG

SM3381EHQGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S2G2S2 30V/18A,RDS(ON) = 20.5m (max.) @ VGS = 10VD1D1RDS(ON) = 30m (max.) @ VGS = 4.5VD1G1 Channel 2DFN3x3E-8_EP230V/18A,RDS(ON) = 10m (max.) @ VGS = 10VRDS(ON) = 16m (max.) @ VGS = 4.5VD1 S1/D2(2)(3) (4) (9) ESD Protection 100% UIS + Rg Tested(1)G1 Reliable an

 9.1. Size:306K  sino
 sm3380ehqg.pdf

SM3381EHQG SM3381EHQG

SM3380EHQGDual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S2G2S2 30V/18A,RDS(ON) = 10.8m (max.) @ VGS = 10VD1D1RDS(ON) = 17.5m (max.) @ VGS = 4.5V D1G1 Channel 2DFN3x3E-8_EP230V/18A,RDS(ON) = 10m (max.) @ VGS = 10VRDS(ON) = 16m (max.) @ VGS = 4.5VD1 S1/D2(2)(3) (4) 100% UIS Tested ESD ProtectionG1 (1) Reliable and Rugged

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPP60R165CP | IRF7701GPBF | SSS6N80A | VBH40-05B | IRF7469 | NCE01P18

 

 
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