SM3381EHQG PDF and Equivalents Search

 

SM3381EHQG Specs and Replacement

Type Designator: SM3381EHQG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 14.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.4 nS

Cossⓘ - Output Capacitance: 73 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0205 Ohm

Package: DFN3X3E-8

SM3381EHQG substitution

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SM3381EHQG datasheet

 ..1. Size:310K  sino
 sm3381ehqg.pdf pdf_icon

SM3381EHQG

SM3381EHQG Dual N-Channel Enhancement Mode MOSFET Features Pin Description Channel 1 S2S2 G2S2 30V/18A, RDS(ON) = 20.5m (max.) @ VGS = 10V D1 D1 RDS(ON) = 30m (max.) @ VGS = 4.5V D1 G1 Channel 2 DFN3x3E-8_EP2 30V/18A, RDS(ON) = 10m (max.) @ VGS = 10V RDS(ON) = 16m (max.) @ VGS = 4.5V D1 S1/D2 (2)(3) (4) (9) ESD Protection 100% UIS + Rg Tested (1) G1 Reliable an... See More ⇒

 9.1. Size:306K  sino
 sm3380ehqg.pdf pdf_icon

SM3381EHQG

SM3380EHQG Dual N-Channel Enhancement Mode MOSFET Features Pin Description Channel 1 S2S2 G2S2 30V/18A, RDS(ON) = 10.8m (max.) @ VGS = 10V D1 D1 RDS(ON) = 17.5m (max.) @ VGS = 4.5V D1 G1 Channel 2 DFN3x3E-8_EP2 30V/18A, RDS(ON) = 10m (max.) @ VGS = 10V RDS(ON) = 16m (max.) @ VGS = 4.5V D1 S1/D2 (2)(3) (4) 100% UIS Tested ESD Protection G1 (1) Reliable and Rugged ... See More ⇒

Detailed specifications: APM9988QB, SM1501GSQH, SM1600DSCS, SM1660DSCS, SM1A23DSK, SM2630DSC, SM2A18DSK, SM3380EHQG, NCEP15T14, SM9990DSQG, SM9992DSQG, SM9994DSO, SM9998DSQG, SM4040DSK, SM4041DSK, SM4042DSK, SM4802DSK

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