All MOSFET. SM2311PSA Datasheet

 

SM2311PSA MOSFET. Datasheet pdf. Equivalent

Type Designator: SM2311PSA

Marking Code: B11*

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.4 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 3.8 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 7 nS

Drain-Source Capacitance (Cd): 76 pF

Maximum Drain-Source On-State Resistance (Rds): 0.062 Ohm

Package: SOT23

SM2311PSA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM2311PSA Datasheet (PDF)

1.1. sm2311psa.pdf Size:165K _sino

SM2311PSA
SM2311PSA

SM2311PSA ® P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-3.8A, D RDS(ON) = 62mΩ(max.) @ VGS =-10V S RDS(ON) = 90mΩ(max.) @ VGS =-4.5V G ESD Protection Top View of SOT-23 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Notebook Computer, Portable Equipment and Ba

4.1. gsm2311.pdf Size:416K _update-mosfet

SM2311PSA
SM2311PSA

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311, P-Channel enhancement mode  -20V/-4.0A,RDS(ON)=56mΩ@VGS=4.5V MOSFET, uses Advanced Trench  -20V/-3.2A,RDS(ON)=70mΩ@VGS=2.5V Technology to provide excellent RDS(ON), low  -20V/-2.8A,RDS(ON)=96mΩ@VGS=1.8V gate charge.  Super high density cell design for These devices are particularly suited f

4.2. gsm2311a.pdf Size:847K _update-mosfet

SM2311PSA
SM2311PSA

GSM2311A 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311A, P-Channel enhancement mode  -20V/-2.8A,RDS(ON)=68mΩ@VGS=-4.5V MOSFET, uses Advanced Trench  -20V/-2.2A,RDS(ON)=80mΩ@VGS=-2.5V Technology to provide excellent RDS(ON), low  -20V/-1.8A,RDS(ON)=105mΩ@VGS=-1.8V gate charge.  Super high density cell design for These devices are parti

 4.3. tsm2311cx.pdf Size:208K _update_mosfet

SM2311PSA
SM2311PSA

 TSM2311 20V P-Channel MOSFET SOT-23 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(mΩ) ID (A) 2. Source 3. Drain 55 @ VGS = -4.5V -4.0 -20 85 @ VGS = -2.5V -2.5 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch P-Channel MOSFET Orderi

4.4. tsm2311cx.pdf Size:208K _taiwansemi

SM2311PSA
SM2311PSA

 TSM2311 20V P-Channel MOSFET SOT-23 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(mΩ) ID (A) 2. Source 3. Drain 55 @ VGS = -4.5V -4.0 -20 85 @ VGS = -2.5V -2.5 Features Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch P-Channel MOSFET Orderi

 4.5. tsm2311 a07.pdf Size:118K _taiwansemi

SM2311PSA
SM2311PSA



4.6. gsm2311.pdf Size:416K _globaltech_semi

SM2311PSA
SM2311PSA

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311, P-Channel enhancement mode  -20V/-4.0A,RDS(ON)=56mΩ@VGS=4.5V MOSFET, uses Advanced Trench  -20V/-3.2A,RDS(ON)=70mΩ@VGS=2.5V Technology to provide excellent RDS(ON), low  -20V/-2.8A,RDS(ON)=96mΩ@VGS=1.8V gate charge.  Super high density cell design for These devices are particularly suited f

4.7. gsm2311a.pdf Size:847K _globaltech_semi

SM2311PSA
SM2311PSA

GSM2311A 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311A, P-Channel enhancement mode  -20V/-2.8A,RDS(ON)=68mΩ@VGS=-4.5V MOSFET, uses Advanced Trench  -20V/-2.2A,RDS(ON)=80mΩ@VGS=-2.5V Technology to provide excellent RDS(ON), low  -20V/-1.8A,RDS(ON)=105mΩ@VGS=-1.8V gate charge.  Super high density cell design for These devices are parti

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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