SM2311PSA - описание и поиск аналогов

SM2311PSA P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-3.8A, D RDS(ON) = 62m (max.) @ VGS =-10V S RDS(ON) = 90m (max.) @ VGS =-4.5V G ESD Protection Top View of SOT-23 100% UIS + Rg Tested Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Notebook Computer, Portable Equipment and Ba

TSM2311 20V P-Channel MOSFET SOT-23 Pin Definition PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m ) ID (A) 2. Source 3. Drain 55 @ VGS = -4.5V -4.0 -20 85 @ VGS = -2.5V -2.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Orderi

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m @VGS=4.5V MOSFET, uses Advanced Trench -20V/-3.2A,RDS(ON)=70m @VGS=2.5V Technology to provide excellent RDS(ON), low -20V/-2.8A,RDS(ON)=96m @VGS=1.8V gate charge. Super high density cell design for These devices are particularly suited f

GSM2311A 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=68m @VGS=-4.5V MOSFET, uses Advanced Trench -20V/-2.2A,RDS(ON)=80m @VGS=-2.5V Technology to provide excellent RDS(ON), low -20V/-1.8A,RDS(ON)=105m @VGS=-1.8V gate charge. Super high density cell design for These devices are parti