SM1A40CSK
MOSFET. Datasheet pdf. Equivalent
Type Designator: SM1A40CSK
Marking Code: 1A40CS
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 2.5(1.7)
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.8
nC
Cossⓘ -
Output Capacitance: 30
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.155(0.345)
Ohm
Package:
SOP8
SM1A40CSK
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM1A40CSK
Datasheet (PDF)
..1. Size:213K sino
sm1a40csk.pdf 
SM1A40CSKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N ChannelD1D1D2100V/2.5A,D2RDS(ON) = 155m (max.) @ VGS = 10VRDS(ON) = 175m (max.) @ VGS = 4.5VS1G1RDS(ON) = 195m (max.) @ VGS = 4.0VS2G2 P ChannelTop View of SOP-8-100V/-1.7A,RDS(ON) = 345m (max.) @ VGS =-10V (8) (7) (6) (5)D1 D1 D2 D2RDS(ON) = 400m (max.)
6.1. Size:269K sino
sm1a40csq.pdf
SM1A40CSQDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N Channel100V/2.3A, D2D1D2D1RDS(ON) = 162m (max.) @ VGS = 10VG2RDS(ON) = 182m (max.) @ VGS = 4.5VS2S1G1RDS(ON) = 203m (max.) @ VGS = 4.0V P Channel Top View of DFN3x3C-8-100V/-1.6A,RDS(ON) = 350m (max.) @ VGS =-10V (8) (7) (6) (5)D1 D1 D2 D2RDS(ON) = 405m (max.) @ VGS =-4.5V
9.1. Size:215K sino
sm1a42csk.pdf
SM1A42CSKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N ChannelD1D1D2100V/2.5A,D2RDS(ON) = 150m (max.) @ VGS = 10VRDS(ON) = 170m (max.) @ VGS = 4.5VS1G1 P Channel S2G2-100V/-2.2A,Top View of SOP-8RDS(ON) = 205m (max.) @ VGS =-10V(8) (7) (6) (5)RDS(ON) = 240m (max.) @ VGS =-4.5VD1 D1 D2 D2 100% UIS + Rg Tested
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