SM4066CSU4
MOSFET. Datasheet pdf. Equivalent
Type Designator: SM4066CSU4
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 39.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 20
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 15.7
nC
Cossⓘ -
Output Capacitance: 98(95)
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038(0.021)
Ohm
Package: TO252-4
SM4066CSU4
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM4066CSU4
Datasheet (PDF)
..1. Size:288K sino
sm4066csu4.pdf 
SM4066CSU4Dual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N Channel D1D240V/20A,RDS(ON) = 21m (max.) @ VGS = 10VS1G1RDS(ON) = 25m (max.) @ VGS = 4.5VS2G2 P ChannelTop View of TO-252-4-40V/-20A,RDS(ON) = 38m (max.) @ VGS =-10V(3) (3)RDS(ON) = 62m (max.) @ VGS =-4.5V D2D1 100% UIS Tested Reliable and Rugged(2)(5) Lead Free A
6.1. Size:277K sino
sm4066csk.pdf
SM4066CSKDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin DescriptionD1 N ChannelD1D2D240V/7.5A,RDS(ON) = 21m (max.) @ VGS = 10VS1RDS(ON) = 25m (max.) @ VGS = 4.5VG1S2 P ChannelG2-40V/-5.5A,Top View of SOP-8RDS(ON) = 38m (max.) @ VGS =-10V(8) (7)(6) (5)D1 D1RDS(ON) = 62m (max.) @ VGS =-4.5VD2 D2 100% UIS + Rg Tested Reliable and Ru
9.1. Size:742K huashuo
hsm4062.pdf
HSM4062 N-Ch 40V Fast Switching MOSFETs Features Product Summary Advanced Trench MOS Technology VDS 40 V Low Gate Charge RDS(ON),typ 12.5 m 100% EAS Guaranteed Green Device Available ID 9.5 A Applications Power Management Functions SOP8 Pin Configuration DC-DC Converters. Backlighting. Absolute Maximum Ratings Symbol Parameter Rating
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