All MOSFET. SM8404CSQ Datasheet

 

SM8404CSQ MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM8404CSQ
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 5.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.3 nC
   Cossⓘ - Output Capacitance: 40(105) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0345(0.039) Ohm
   Package: DFN3X3C-8

 SM8404CSQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM8404CSQ Datasheet (PDF)

 ..1. Size:268K  sino
 sm8404csq.pdf

SM8404CSQ SM8404CSQ

SM8404CSQDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N Channel30V/5.2A,D2D1D2D1RDS(ON) = 34.5m (max.) @ VGS = 10VRDS(ON) = 60m (max.) @ VGS = 4.5V G2S2S1G1 P Channel Top View of DFN3x3C-8-30V/-5.2A,RDS(ON) = 39m (max.) @ VGS =-10V(8) (7) (6) (5)RDS(ON) = 61m (max.) @ VGS =-4.5VD1 D1 D2 D2 100% UIS + Rg Tested Reliable and Ru

 0.1. Size:294K  sino
 sm8404csqa.pdf

SM8404CSQ SM8404CSQ

SM8404CSQADual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N Channel Top View Bottom View30V/11A,D2D1D2RDS(ON) = 34.5m (max.) @ VGS = 10VD1RDS(ON) = 60m (max.) @ VGS = 4.5VG2Pin 1S2 P ChannelS1G1-30V/-13.3A,DFN3x3B-8_EP2RDS(ON) = 39m (max.) @ VGS =-10VRDS(ON) = 61m (max.) @ VGS =-4.5V(8) (7) (6) (5)D1 D1 D2 D2 100% UIS + Rg T

 9.1. Size:320K  sino
 sm8401csq.pdf

SM8404CSQ SM8404CSQ

SM8401CSQDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N Channel (Integrated Schottky Diode)D230V/6.9A,D1D2D1RDS(ON) = 29m (max.) @ VGS = 10VRDS(ON) = 42m (max.) @ VGS = 4.5VG2S2S1G1RDS(ON) = 50m (max.) @ VGS = 4V P Channel Top View of DFN3x3C-8-30V/-5.9A,RDS(ON) = 40m (max.) @ VGS =-10VRDS(ON) = 60m (max.) @ VGS =-4.5V(8) (7) (

 9.2. Size:273K  sino
 sm8403csq.pdf

SM8404CSQ SM8404CSQ

SM8403CSQDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N Channel30V/5.6A,D2D1D2RDS(ON) = 29m (max.) @ VGS = 10V D1RDS(ON) = 39m (max.) @ VGS = 4.5VG2S2 P ChannelS1G1-30V/-4.2A, Top View of DFN3x3C-8RDS(ON) = 63m (max.) @ VGS =-10VRDS(ON) = 100m (max.) @ VGS =-4.5V(8) (7) (6) (5) 100% UIS + Rg TestedD1 D1 D2 D2 ESD Protection

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