All MOSFET. RFL1N18L Datasheet

 

RFL1N18L MOSFET. Datasheet pdf. Equivalent

Type Designator: RFL1N18L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 8.33 W

Maximum Drain-Source Voltage |Vds|: 180 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 1 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 60 pF

Maximum Drain-Source On-State Resistance (Rds): 3.65 Ohm

Package: TO205AF

RFL1N18L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RFL1N18L Datasheet (PDF)

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RFL1N18L

RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel September 1998 Power MOSFET Features Description • 1A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic • rDS(ON) = 1.200Ω level (5V) driving sources in applications such as program- mable controllers, automotive switching, and solenoid driv- ers. Thi

Datasheet: SM4603CSK , SM4901CSK , SM6041CSK , SM6043CSQ , SM7308CSKP , RFL1N08 , RFL1N10 , RFL1N18 , IRF630 , RFL1N20 , RFL1N20L , RFL2N05 , RFL2N05L , RFL2N06 , RFL2N06L , RFL1P08 , RFL1P10 .

 


RFL1N18L
  RFL1N18L
  RFL1N18L
  RFL1N18L
 
RFL1N18L
  RFL1N18L
  RFL1N18L
  RFL1N18L
 

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