RFL1N18L PDF and Equivalents Search

 

RFL1N18L Specs and Replacement

Type Designator: RFL1N18L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 8.33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 180 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.65 Ohm

Package: TO205AF

RFL1N18L substitution

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RFL1N18L datasheet

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RFL1N18L

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RFL1N18L

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RFL1N18L

RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel September 1998 Power MOSFET Features Description 1A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic rDS(ON) = 1.200 level (5V) driving sources in applications such as program- mable controllers, automotive switching, and solenoid driv- ers. Thi... See More ⇒

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Detailed specifications: SM4603CSK, SM4901CSK, SM6041CSK, SM6043CSQ, SM7308CSKP, RFL1N08, RFL1N10, RFL1N18, IRF640, RFL1N20, RFL1N20L, RFL2N05, RFL2N05L, RFL2N06, RFL2N06L, RFL1P08, RFL1P10

Keywords - RFL1N18L MOSFET specs

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