All MOSFET. RFL1N20 Datasheet

 

RFL1N20 Datasheet and Replacement


   Type Designator: RFL1N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 8.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.65 Ohm
   Package: TO205AF
 

 RFL1N20 substitution

   - MOSFET ⓘ Cross-Reference Search

 

RFL1N20 Datasheet (PDF)

 ..1. Size:90K  njs
 rfl1n18 rfl1n20.pdf pdf_icon

RFL1N20

 0.1. Size:87K  njs
 rfl1n18l rfl1n20l rfp2n18l rfp2n20l.pdf pdf_icon

RFL1N20

 9.1. Size:87K  njs
 rfl1n08 rfl1n10.pdf pdf_icon

RFL1N20

 9.2. Size:33K  intersil
 rfl1n10l.pdf pdf_icon

RFL1N20

RFL1N10L1A, 100V, 1.200 Ohm, Logic Level, N-ChannelSeptember 1998 Power MOSFETFeatures Description 1A, 100V This is an N-Channel enhancement mode silicon gate powerfield effect transistor specifically designed for use with logic rDS(ON) = 1.200level (5V) driving sources in applications such as program-mable controllers, automotive switching, and solenoid driv-ers. Thi

SHOW MORE

Datasheet: SM4901CSK , SM6041CSK , SM6043CSQ , SM7308CSKP , RFL1N08 , RFL1N10 , RFL1N18 , RFL1N18L , IRF1404 , RFL1N20L , RFL2N05 , RFL2N05L , RFL2N06 , RFL2N06L , RFL1P08 , RFL1P10 , RFP2N18L .

History: PSMN5R8-30LL | GP1T080A120B | 2SK536 | STH9NA80FI | OSG65R290DEF | NTMFS5C670NT1G | RFL2N05L

Keywords - RFL1N20 MOSFET datasheet

 RFL1N20 cross reference
 RFL1N20 equivalent finder
 RFL1N20 lookup
 RFL1N20 substitution
 RFL1N20 replacement

 

 
Back to Top

 


 
.