RFL1N20 Specs and Replacement
Type Designator: RFL1N20
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 8.33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.65 Ohm
Package: TO205AF
RFL1N20 substitution
- MOSFET ⓘ Cross-Reference Search
RFL1N20 datasheet
rfl1n10l.pdf
RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel September 1998 Power MOSFET Features Description 1A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic rDS(ON) = 1.200 level (5V) driving sources in applications such as program- mable controllers, automotive switching, and solenoid driv- ers. Thi... See More ⇒
Detailed specifications: SM4901CSK, SM6041CSK, SM6043CSQ, SM7308CSKP, RFL1N08, RFL1N10, RFL1N18, RFL1N18L, IRF1404, RFL1N20L, RFL2N05, RFL2N05L, RFL2N06, RFL2N06L, RFL1P08, RFL1P10, RFP2N18L
Keywords - RFL1N20 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AOL1206 | IRLS3813PBF
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