All MOSFET. RFL1N20 Datasheet

 

RFL1N20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RFL1N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 8.33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.65 Ohm
   Package: TO205AF

 RFL1N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFL1N20 Datasheet (PDF)

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RFL1N10L1A, 100V, 1.200 Ohm, Logic Level, N-ChannelSeptember 1998 Power MOSFETFeatures Description 1A, 100V This is an N-Channel enhancement mode silicon gate powerfield effect transistor specifically designed for use with logic rDS(ON) = 1.200level (5V) driving sources in applications such as program-mable controllers, automotive switching, and solenoid driv-ers. Thi

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