2SK1202 Specs and Replacement
Type Designator: 2SK1202
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO3PI
2SK1202 substitution
- MOSFET ⓘ Cross-Reference Search
2SK1202 datasheet
2sk1202.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1202 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- VDSS= 900V(Min) Fast Switching Speed APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 900 V... See More ⇒
Detailed specifications: RFP2N18L, AP9916H, AP9916J, SSM70T03H, SSM70T03J, IRF630MFP, IRFD123, SIHFD123, IRF630, IPD06N03LA, IPU06N03LA, IPS06N03LA, IPF06N03LA, IXFT50N50P3, IXFQ50N50P3, IXFH50N50P3, APM2510NU
Keywords - 2SK1202 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 4N60KL-TMS4-T | FDMQ8203 | SI4848ADY
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