IPS06N03LA
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPS06N03LA
Marking Code: 06N03LA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 50
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 7.2
nS
Cossⓘ -
Output Capacitance: 800
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005
Ohm
Package:
TO251
IPS06N03LA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPS06N03LA
Datasheet (PDF)
..1. Size:420K infineon
ipd06n03la ipf06n03la ips06n03la ipu06n03la.pdf 
IPD06N03LA IPF06N03LAIPS06N03LA IPU06N03LAOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 5.7mDS(on),max Qualified according to JEDEC1) for target applicationI 50 AD N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance 175 C
9.1. Size:523K infineon
ipd060n03lg ipf060n03lg ips060n03lg ipu060n03lg.pdf
Type IPD060N03L G IPF060N03L GIPS060N03L G IPU060N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 6mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very lo
9.2. Size:1017K infineon
ips060n03l.pdf
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9.3. Size:634K infineon
ipd060n03l ipf060n03l ips060n03l ipu060n03l.pdf
Type IPD060N03L G IPF060N03L GIPS060N03L G IPU060N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 6mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low
Datasheet: WPB4002
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