IXFQ50N50P3 Datasheet. Specs and Replacement

Type Designator: IXFQ50N50P3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 960 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 540 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO3P

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IXFQ50N50P3 datasheet

 ..1. Size:139K  ixys
 ixft50n50p3 ixfq50n50p3 ixfh50n50p3.pdf pdf_icon

IXFQ50N50P3

Polar3TM HiperFETTM VDSS = 500V IXFT50N50P3 ID25 = 50A Power MOSFET IXFQ50N50P3 RDS(on) 125m IXFH50N50P3 N-Channel Enhancement Mode TO-268 (IXFT) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V G VDGR TJ = 25 C to 150 C, RGS = 1M 500 V D... See More ⇒

 7.1. Size:184K  ixys
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IXFQ50N50P3

Preliminary Technical Information X-Class HiPerFETTM VDSS = 600V IXFT50N60X Power MOSFET ID25 = 50A IXFQ50N60X RDS(on) 73m IXFH50N60X N-Channel Enhancement Mode TO-268 (IXFT) Avalanche Rated Fast Intrinsic Diode G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 600 V D VDGR TJ = 25 C to 1... See More ⇒

Detailed specifications: IRFD123, SIHFD123, 2SK1202, IPD06N03LA, IPU06N03LA, IPS06N03LA, IPF06N03LA, IXFT50N50P3, IRF1010E, IXFH50N50P3, APM2510NU, IRF7832Z, 2SK2222, MDF11N65B, MMIS60R580P, 2SK3435, 2SK3435-S

Keywords - IXFQ50N50P3 MOSFET specs

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