IXFQ50N50P3 Datasheet and Replacement
Type Designator: IXFQ50N50P3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 960 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 540 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO3P
IXFQ50N50P3 substitution
IXFQ50N50P3 Datasheet (PDF)
ixft50n50p3 ixfq50n50p3 ixfh50n50p3.pdf
Polar3TM HiperFETTM VDSS = 500VIXFT50N50P3ID25 = 50APower MOSFETIXFQ50N50P3 RDS(on) 125m IXFH50N50P3N-Channel Enhancement ModeTO-268 (IXFT)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VGVDGR TJ = 25C to 150C, RGS = 1M 500 VD
ixfh50n60x ixfq50n60x ixft50n60x.pdf
Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFT50N60XPower MOSFET ID25 = 50AIXFQ50N60X RDS(on) 73m IXFH50N60XN-Channel Enhancement ModeTO-268 (IXFT)Avalanche RatedFast Intrinsic DiodeGSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 600 VDVDGR TJ = 25C to 1
Datasheet: IRFD123 , SIHFD123 , 2SK1202 , IPD06N03LA , IPU06N03LA , IPS06N03LA , IPF06N03LA , IXFT50N50P3 , IRF1010E , IXFH50N50P3 , APM2510NU , IRF7832Z , 2SK2222 , MDF11N65B , MMIS60R580P , 2SK3435 , 2SK3435-S .
History: AUIRLB4030
Keywords - IXFQ50N50P3 MOSFET datasheet
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History: AUIRLB4030
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