All MOSFET. IXFQ50N50P3 Datasheet

 

IXFQ50N50P3 Datasheet and Replacement


   Type Designator: IXFQ50N50P3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 960 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 540 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO3P
 

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IXFQ50N50P3 Datasheet (PDF)

 ..1. Size:139K  ixys
 ixft50n50p3 ixfq50n50p3 ixfh50n50p3.pdf pdf_icon

IXFQ50N50P3

Polar3TM HiperFETTM VDSS = 500VIXFT50N50P3ID25 = 50APower MOSFETIXFQ50N50P3 RDS(on) 125m IXFH50N50P3N-Channel Enhancement ModeTO-268 (IXFT)Avalanche RatedFast Intrinsic RectifierGSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VGVDGR TJ = 25C to 150C, RGS = 1M 500 VD

 7.1. Size:184K  ixys
 ixfh50n60x ixfq50n60x ixft50n60x.pdf pdf_icon

IXFQ50N50P3

Preliminary Technical InformationX-Class HiPerFETTM VDSS = 600VIXFT50N60XPower MOSFET ID25 = 50AIXFQ50N60X RDS(on) 73m IXFH50N60XN-Channel Enhancement ModeTO-268 (IXFT)Avalanche RatedFast Intrinsic DiodeGSD (Tab)TO-3P (IXFQ)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 150C 600 VDVDGR TJ = 25C to 1

Datasheet: IRFD123 , SIHFD123 , 2SK1202 , IPD06N03LA , IPU06N03LA , IPS06N03LA , IPF06N03LA , IXFT50N50P3 , K4145 , IXFH50N50P3 , APM2510NU , IRF7832Z , 2SK2222 , MDF11N65B , MMIS60R580P , 2SK3435 , 2SK3435-S .

History: FMH23N50E | STT812A | HYG035N10NS2P | AO4260

Keywords - IXFQ50N50P3 MOSFET datasheet

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