IRF7832Z PDF and Equivalents Search

 

IRF7832Z Specs and Replacement

Type Designator: IRF7832Z

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 840 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm

Package: SO8

IRF7832Z substitution

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IRF7832Z datasheet

 ..1. Size:265K  international rectifier
 irf7832z.pdf pdf_icon

IRF7832Z

PD - 96975A IRF7832Z HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Synchronous MOSFET for Notebook 3.8m @VGS = 10V Processor Power 30V 30nC l Synchronous Rectifier MOSFET for Isolated DC-DC Converters A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Voltage and Current SO-8... See More ⇒

 7.1. Size:262K  international rectifier
 irf7832pbf.pdf pdf_icon

IRF7832Z

PD - 95016A IRF7832PbF HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Synchronous MOSFET for Notebook Processor Power 4.0m @VGS = 10V 30V 34nC l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D l Lead-Free 2 7 S D Benefits 3 6 S D l Very Low RDS(on) at 4.5V VGS 4 5 G D l Ultra-Low Gate Impedance SO-8 l Fully Chara... See More ⇒

 7.2. Size:249K  international rectifier
 irf7832pbf-1.pdf pdf_icon

IRF7832Z

IRF7832PbF-1 HEXFET Power MOSFET A VDS 30 V A 1 8 S D RDS(on) max 4.0 m 2 7 S D (@V = 10V) GS 3 6 Qg (typical) 34 nC S D ID 4 5 G D 20 A (@T = 25 C) A SO-8 Top View Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Features Benefits Industry-standard pinout SO-8 Packa... See More ⇒

 7.3. Size:188K  international rectifier
 irf7832.pdf pdf_icon

IRF7832Z

PD - 94594A IRF7832 HEXFET Power MOSFET Applications VDSS RDS(on) max Qg l Synchronous MOSFET for Notebook Processor Power 4.0m @VGS = 10V 30V 34nC l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Volt... See More ⇒

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Detailed specifications: IPD06N03LA , IPU06N03LA , IPS06N03LA , IPF06N03LA , IXFT50N50P3 , IXFQ50N50P3 , IXFH50N50P3 , APM2510NU , AO3401 , 2SK2222 , MDF11N65B , MMIS60R580P , 2SK3435 , 2SK3435-S , 2SK3435-Z , AM4410N , APM2014N .

History: FDG6306P

Keywords - IRF7832Z MOSFET specs

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