All MOSFET. GPT13N50D Datasheet

 

GPT13N50D Datasheet and Replacement


   Type Designator: GPT13N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.49 Ohm
   Package: TO220F
 

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GPT13N50D Datasheet (PDF)

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GPT13N50D

GPT13N50 / GPT13N50D POWER FIELD EFFECT TRANSISTOR Fig 6. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Drain-to-Source Voltage 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 4 GPT13N50 / GPT13N50D POWER FIELD EFFECT TRANSISTOR PACKAGE DIMENSION TO-220 TO-220F 2013/6/26 Rev1.4 Greatpower Microelectronic Corp. Page 5 GPT13N50 / G

Datasheet: B3942 , CEB51A3 , CEP51A3 , CS4145 , FDD6035AL , FHP740 , FTP08N06A , GPT13N50 , IRFP250 , JCS4N65C , JCS4N65F , JCS4N65R , JCS4N65V , LSK389 , MDV1528 , ME60N03 , ME60N03A .

History: STR2N2VH5

Keywords - GPT13N50D MOSFET datasheet

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