JCS4N65R Datasheet. Specs and Replacement

Type Designator: JCS4N65R  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 62 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: DPAK

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JCS4N65R datasheet

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JCS4N65R

R JCS4N65E JCS4N65E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_max 2.5 Vgs=10V Qg-typ 11.9nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low gate ... See More ⇒

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JCS4N65R

R JCS4N65C JCS4N65C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_ Typ 2.1 Vgs=1 Max 2.6 0V Qg-typ 14nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low g... See More ⇒

 0.1. Size:831K  jilin sino
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JCS4N65R

N R N-CHANNEL MOSFET JCS4N65B Package MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS Rdson 2.5 @Vgs=10V 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS ... See More ⇒

 0.2. Size:1598K  jilin sino
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JCS4N65R

N R N-CHANNEL MOSFET JCS4N65B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 650 V Rdson Vgs=10V 2.4 -Max Qg-Typ 16.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP... See More ⇒

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Detailed specifications: CS4145, FDD6035AL, FHP740, FTP08N06A, GPT13N50, GPT13N50D, JCS4N65C, JCS4N65F, STP80NF70, JCS4N65V, LSK389, MDV1528, ME60N03, ME60N03A, NE5520279A, NTE458, PHB55N03LTA

Keywords - JCS4N65R MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.