UTC50N06L PDF and Equivalents Search

 

UTC50N06L Specs and Replacement

Type Designator: UTC50N06L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO220

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UTC50N06L datasheet

 ..1. Size:145K  utc
 utc50n06l.pdf pdf_icon

UTC50N06L

UNISONIC TECHNOLOGIES CO., LTD 50N06 MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. 1 It is mainly suitable electronic ballast, and low po... See More ⇒

Detailed specifications: PHP55N03LTA, QM3006D, SI4340DY, SPB80N08S2L, SPP80N08S2L, STK630F, TSF8N60M, TSP8N60M, 2N60, STK0460F, FMH23N50E, FMV23N50E, FMR23N50E, FQP630, SVF2N60M, SVF2N60F, SVF2N60T

Keywords - UTC50N06L MOSFET specs

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