All MOSFET. UTC50N06L Datasheet

 

UTC50N06L Datasheet and Replacement


   Type Designator: UTC50N06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO220
 

 UTC50N06L substitution

   - MOSFET ⓘ Cross-Reference Search

 

UTC50N06L Datasheet (PDF)

 ..1. Size:145K  utc
 utc50n06l.pdf pdf_icon

UTC50N06L

UNISONIC TECHNOLOGIES CO., LTD 50N06 MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. 1It is mainly suitable electronic ballast, and low po

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SDU07N65

Keywords - UTC50N06L MOSFET datasheet

 UTC50N06L cross reference
 UTC50N06L equivalent finder
 UTC50N06L lookup
 UTC50N06L substitution
 UTC50N06L replacement

 

 
Back to Top

 


 
.