All MOSFET. UTC50N06L Datasheet

 

UTC50N06L Datasheet and Replacement


   Type Designator: UTC50N06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO220
 

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UTC50N06L Datasheet (PDF)

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UTC50N06L

UNISONIC TECHNOLOGIES CO., LTD 50N06 MOSFET 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. 1It is mainly suitable electronic ballast, and low po

Datasheet: PHP55N03LTA , QM3006D , SI4340DY , SPB80N08S2L , SPP80N08S2L , STK630F , TSF8N60M , TSP8N60M , IRF830 , STK0460F , FMH23N50E , FMV23N50E , FMR23N50E , FQP630 , SVF2N60M , SVF2N60F , SVF2N60T .

History: SML60H16 | IXTH27N40MB

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