FQP630 PDF and Equivalents Search

 

FQP630 Specs and Replacement

Type Designator: FQP630

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO220

FQP630 substitution

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FQP630 datasheet

 ..1. Size:705K  fairchild semi
 fqp630.pdf pdf_icon

FQP630

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been espec... See More ⇒

 0.1. Size:733K  fairchild semi
 fqp630tstu.pdf pdf_icon

FQP630

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 9A, 200V, RDS(on) = 0.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 35 pF) This advanced technology has been espec... See More ⇒

Detailed specifications: STK630F, TSF8N60M, TSP8N60M, UTC50N06L, STK0460F, FMH23N50E, FMV23N50E, FMR23N50E, IRFB31N20D, SVF2N60M, SVF2N60F, SVF2N60T, SVF2N60D, 2SK641, 2SK642, HBS170, HFF11N60S

Keywords - FQP630 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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