All MOSFET. FQP630 Datasheet

 

FQP630 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP630

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 78 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 75 nS

Drain-Source Capacitance (Cd): 85 pF

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: TO220

FQP630 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP630 Datasheet (PDF)

1.1. fqp630.pdf Size:705K _update

FQP630
FQP630

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 9A, 200V, RDS(on) = 0.4Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 19 nC) planar stripe, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been espec

Datasheet: STK630F , TSF8N60M , TSP8N60M , UTC50N06L , STK0460F , FMH23N50E , FMV23N50E , FMR23N50E , 40673 , SVF2N60M , SVF2N60F , SVF2N60T , SVF2N60D , 2SK641 , 2SK642 , HBS170 , HFF11N60S .

 


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