All MOSFET. SVF2N60T Datasheet

 

SVF2N60T Datasheet and Replacement


   Type Designator: SVF2N60T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23.4 nS
   Cossⓘ - Output Capacitance: 35.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: TO220
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SVF2N60T Datasheet (PDF)

 ..1. Size:600K  silan
 svf2n60m svf2n60mj svf2n60n svf2n60f svf2n60t svf2n60d.pdf pdf_icon

SVF2N60T

SVF2N60M/MJ/N/F/T/D 2A600V N SVF2N60M/MJ/N/F/T/D NMOSF-CellTMVDMOS

 ..2. Size:519K  silan
 svf2n60m svf2n60mj svf2n60n svf2n60nf svf2n60f svf2n60t svf2n60d.pdf pdf_icon

SVF2N60T

SVF2N60M/MJ/N/NF/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2SVF2N60M(MJ)(N)(NF)(F)(T)(D) is an N-channel enhancement mode 13TO-252-2Lpower MOS field effect transistor which is produced using Silan 1proprietary F-CellTM structure VDMOS technology. The improved 31process and cell structure have been especially tailored to minimize 231.Gate 2.Dra

 ..3. Size:624K  silan
 svf2n60m svf2n60f svf2n60t svf2n60d.pdf pdf_icon

SVF2N60T

SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s

 7.1. Size:692K  silan
 svf2n60m svf2n60mj svf2n60nf svf2n60f svf2n60d.pdf pdf_icon

SVF2N60T

SVF2N60M(MJ)(NF)(F)(D) 2A600V N 2SVF2N60M(MJ)(NF)(F)(D) N MOS 1 F-CellTM VDMOS 123 3TO-126F-3L

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History: STD3NK50Z | SVS11N65DD2TR | DH100P40E | LSD65R105HF | 2SK681A | NVMFD5483NLT1G | IPD06N03LBG

Keywords - SVF2N60T MOSFET datasheet

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