2SK642 PDF and Equivalents Search

 

2SK642 Specs and Replacement

Type Designator: 2SK642

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO3P

2SK642 substitution

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2SK642 datasheet

 ..1. Size:49K  hitachi
2sk641 2sk642.pdf pdf_icon

2SK642

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 ..2. Size:237K  inchange semiconductor
2sk642.pdf pdf_icon

2SK642

isc N-Channel MOSFET Transistor 2SK642 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS low on resistance High speed switching Low drive current No secondary breakdown Suitable f... See More ⇒

 9.1. Size:38K  hitachi
2sk646.pdf pdf_icon

2SK642

... See More ⇒

 9.2. Size:230K  inchange semiconductor
2sk643.pdf pdf_icon

2SK642

isc N-Channel MOSFET Transistor 2SK643 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies... See More ⇒

Detailed specifications: FMV23N50E, FMR23N50E, FQP630, SVF2N60M, SVF2N60F, SVF2N60T, SVF2N60D, 2SK641, IRF830, HBS170, HFF11N60S, HFF2N60, HFF5N60, HFF630, HFF640, HFF7N60, HFH12N60

Keywords - 2SK642 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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