All MOSFET. 2SK642 Datasheet

 

2SK642 Datasheet and Replacement


   Type Designator: 2SK642
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 470 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO3P
 

 2SK642 substitution

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2SK642 Datasheet (PDF)

 ..1. Size:49K  hitachi
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2SK642

 ..2. Size:237K  inchange semiconductor
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2SK642

isc N-Channel MOSFET Transistor 2SK642DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSlow onresistanceHigh speed switchingLow drive currentNo secondary breakdownSuitable f

 9.1. Size:38K  hitachi
 2sk646.pdf pdf_icon

2SK642

 9.2. Size:230K  inchange semiconductor
 2sk643.pdf pdf_icon

2SK642

isc N-Channel MOSFET Transistor 2SK643DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies

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Datasheet: FMV23N50E , FMR23N50E , FQP630 , SVF2N60M , SVF2N60F , SVF2N60T , SVF2N60D , 2SK641 , IRF830 , HBS170 , HFF11N60S , HFF2N60 , HFF5N60 , HFF630 , HFF640 , HFF7N60 , HFH12N60 .

History: SPP80N08S2L | SVF2N60M | FS2KM-12 | DH100P30E | FS2KM-18A | 2N6796U

Keywords - 2SK642 MOSFET datasheet

 2SK642 cross reference
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