All MOSFET. HFF5N60 Datasheet

 

HFF5N60 Datasheet and Replacement


   Type Designator: HFF5N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO220F
      - MOSFET Cross-Reference Search

 

HFF5N60 Datasheet (PDF)

 ..1. Size:727K  shantou-huashan
 hff5n60.pdf pdf_icon

HFF5N60

Shantou Huashan Electronic Devices Co.,Ltd. HFF5N60 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220FThey are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SDU03N04 | WML11N80M3 | STP85N3LH5 | MTP3055A | IPP70N10S3-12 | HM4453 | PSMN8R5-100ES

Keywords - HFF5N60 MOSFET datasheet

 HFF5N60 cross reference
 HFF5N60 equivalent finder
 HFF5N60 lookup
 HFF5N60 substitution
 HFF5N60 replacement

 

 
Back to Top

 


 
.