All MOSFET. HFF5N60 Datasheet

 

HFF5N60 Datasheet and Replacement


   Type Designator: HFF5N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15 nC
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO220F
 

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HFF5N60 Datasheet (PDF)

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HFF5N60

Shantou Huashan Electronic Devices Co.,Ltd. HFF5N60 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-220FThey are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc

Datasheet: SVF2N60F , SVF2N60T , SVF2N60D , 2SK641 , 2SK642 , HBS170 , HFF11N60S , HFF2N60 , EMB04N03H , HFF630 , HFF640 , HFF7N60 , HFH12N60 , HFH20N50 , HFH7N60 , HFH9N90 , HFP13N10 .

History: BUK661R8-30C | BSR58

Keywords - HFF5N60 MOSFET datasheet

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