All MOSFET. HFF640 Datasheet

 

HFF640 Datasheet and Replacement


   Type Designator: HFF640
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.18 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 45 nC
   tr ⓘ - Rise Time: 145 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220F
 

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HFF640 Datasheet (PDF)

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HFF640

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFF640 APPLICATIONSL TO-220F High Voltage High-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 1TstgStorage Temperature-55~150 1G Tj Operating Junction Temperature 150 2D PD Allowable Power Dissipatio

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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