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HFH9N90 Specs and Replacement

Type Designator: HFH9N90

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 130 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO3P

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HFH9N90 datasheet

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HFH9N90

Shantou Huashan Electronic Devices Co.,Ltd. HFH9N90 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance... See More ⇒

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HFH9N90

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Detailed specifications: HFF2N60, HFF5N60, HFF630, HFF640, HFF7N60, HFH12N60, HFH20N50, HFH7N60, 60N06, HFP13N10, HFP13N50, HFP15N06, HFP17N10, HFP2N60, HFP30N06, HFP45N06, HFP4N60

Keywords - HFH9N90 MOSFET specs

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