All MOSFET. HFH9N90 Datasheet

 

HFH9N90 Datasheet and Replacement


   Type Designator: HFH9N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO3P
 

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HFH9N90 Datasheet (PDF)

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HFH9N90

Shantou Huashan Electronic Devices Co.,Ltd. HFH9N90 N-Channel Enhancement Mode Field Effect Transistor General Description These are N-Channel enhancement mode silicon gate power field effect transistors. TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance

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HFH9N90

Jul 2023BVDSS = 900 VRDS(on) Typ = 1.4 HFH9N90AID = 9.0 A900V N-Channel MOSFETTO-3PFEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 52 nC (Typ.) Extended Safe Operating Area

Datasheet: HFF2N60 , HFF5N60 , HFF630 , HFF640 , HFF7N60 , HFH12N60 , HFH20N50 , HFH7N60 , AO4468 , HFP13N10 , HFP13N50 , HFP15N06 , HFP17N10 , HFP2N60 , HFP30N06 , HFP45N06 , HFP4N60 .

History: IXFB38N100Q2

Keywords - HFH9N90 MOSFET datasheet

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