HFP2N60 Specs and Replacement
Type Designator: HFP2N60
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: TO220
HFP2N60 substitution
- MOSFET ⓘ Cross-Reference Search
HFP2N60 datasheet
hfp2n60f hfs2n60f.pdf
Oct 2016 HFP2N60F / HFS2N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 2A Excellent Switching Characteristics RDS(on), Typ 3.6 100% Avalanche Tested Qg, Typ 6.5 nC RoHS Compliant HFP2N60F HFS2N60F Symbol TO-220 TO-220F S S D D G G Absolute Maximum Ratings TC=25 unles... See More ⇒
hfp2n60u.pdf
Nov 2013 BVDSS = 600 V RDS(on) typ = HFP2N60U ID = 2 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 5.5 nC (Typ.) Extended Safe Operating Area Lower R... See More ⇒
hfp2n60s.pdf
March 2014 BVDSS = 600 V RDS(on) typ HFP2N60S ID = 2.0 A 600V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 6.0 nC (Typ.) Extended Safe Operating Area L... See More ⇒
Detailed specifications: HFH12N60, HFH20N50, HFH7N60, HFH9N90, HFP13N10, HFP13N50, HFP15N06, HFP17N10, IRF3205, HFP30N06, HFP45N06, HFP4N60, HFP4N65, HFP50N06, HFP50N06V, HFP5N80, HFP60N06
Keywords - HFP2N60 MOSFET specs
HFP2N60 cross reference
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HFP2N60 substitution
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