All MOSFET. HFP640 Datasheet

 

HFP640 Datasheet and Replacement


   Type Designator: HFP640
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 300 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220
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HFP640 Datasheet (PDF)

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HFP640

Shantou Huashan Electronic Devices Co.,Ltd. HFP640 N-Channel Enhancement Mode Field Effect Transistor General Description TO-220 These power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment 1- G 2-D 3

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HGD095NE4SL | NCE1805S | SIR788DP | WST3052 | SVSP11N65SD2 | SSI4N80A | IXTN320N10T

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