All MOSFET. HFP640 Datasheet

 

HFP640 Datasheet and Replacement


   Type Designator: HFP640
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 300 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220
 

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HFP640 Datasheet (PDF)

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HFP640

Shantou Huashan Electronic Devices Co.,Ltd. HFP640 N-Channel Enhancement Mode Field Effect Transistor General Description TO-220 These power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment 1- G 2-D 3

Datasheet: HFP45N06 , HFP4N60 , HFP4N65 , HFP50N06 , HFP50N06V , HFP5N80 , HFP60N06 , HFP630 , IRF1404 , HFP70N03V , HFP70N06 , HFP730 , HFP740 , HFP75N08 , HFP75N80C , HFP7N60 , HFP7N80 .

History: SSG4902NA | SVT20240NS | JCS8N60CB | AO4722 | FHS100N09A | IRLML6402TRPBF | APTM50DAM38CTG

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