HFP75N80C Datasheet and Replacement
Type Designator: HFP75N80C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 450 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO220
HFP75N80C substitution
HFP75N80C Datasheet (PDF)
hfp75n80c.pdf
Shantou Huashan Electronic Devices Co.,Ltd. HFP75N80CN-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Servo motor control. Power MOSFET gate drivers. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 75A, 80V(See Note), RDS(on)
hfp75n08.pdf
N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP75N08 APPLICATIONSL TO-220 Low Voltage high-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~1751G Tj Operating Junction Temperature 1502D PD Allowable Power Dissipation
Datasheet: HFP60N06 , HFP630 , HFP640 , HFP70N03V , HFP70N06 , HFP730 , HFP740 , HFP75N08 , IRFB4227 , HFP7N60 , HFP7N80 , HFP80N75 , HFP830 , HFP840 , HFR1N60 , HFU1N60 , HFU2N60 .
Keywords - HFP75N80C MOSFET datasheet
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