All MOSFET. HFP75N80C Datasheet

 

HFP75N80C MOSFET. Datasheet pdf. Equivalent


   Type Designator: HFP75N80C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6.5 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 120 nC
   trⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO220

 HFP75N80C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFP75N80C Datasheet (PDF)

 ..1. Size:1339K  shantou-huashan
 hfp75n80c.pdf

HFP75N80C HFP75N80C

Shantou Huashan Electronic Devices Co.,Ltd. HFP75N80CN-Channel Enhancement Mode Field Effect Transistor Applications TO-220 Servo motor control. Power MOSFET gate drivers. DC/DC converters Other switching applications. 1- G 2-D 3-S Features 75A, 80V(See Note), RDS(on)

 8.1. Size:270K  shantou-huashan
 hfp75n08.pdf

HFP75N80C HFP75N80C

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP75N08 APPLICATIONSL TO-220 Low Voltage high-Speed Switching. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature-55~1751G Tj Operating Junction Temperature 1502D PD Allowable Power Dissipation

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SSM3J334R

 

 
Back to Top