HFP830 Specs and Replacement
Type Designator: HFP830
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220
HFP830 substitution
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HFP830 datasheet
hfp830.pdf
Shantou Huashan Electronic Devices Co.,Ltd. HFP830 N-Channel Enhancement Mode Field Effect Transistor General Description TO-220 This Power MOSFET is produced using planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for half b... See More ⇒
hfp830.pdf
June 2005 BVDSS = 500 V RDS(on) typ HFP830 ID = 4.5 A 500V N-Channel MOSFET TO-220 FEATURES Originative New Design 1 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 18 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)... See More ⇒
hfp830f hfs830f.pdf
May 2016 HFP830F / HFS830F 500V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 500 V Very Low Intrinsic Capacitances ID 5 A Excellent Switching Characteristics RDS(on), Typ 1.2 100% Avalanche Tested Qg, Typ 12 nC RoHS Compliant HFP830F HFS830F Symbol TO-220 TO-220F S S D D G G Absolute Ma... See More ⇒
Detailed specifications: HFP70N06, HFP730, HFP740, HFP75N08, HFP75N80C, HFP7N60, HFP7N80, HFP80N75, IRFB4115, HFP840, HFR1N60, HFU1N60, HFU2N60, HFU70N03V, 2SJ655, 2SK2056, 2SK2617ALS
Keywords - HFP830 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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