All MOSFET. STP55NE06 Datasheet

 

STP55NE06 Datasheet and Replacement


   Type Designator: STP55NE06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO220
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STP55NE06 Datasheet (PDF)

 ..1. Size:383K  st
 stp55ne06.pdf pdf_icon

STP55NE06

STP55NE06STP55NE06FPN - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP55NE06 60 V

 0.1. Size:115K  st
 stp55ne06l.pdf pdf_icon

STP55NE06

STP55NE06LSTP55NE06LFPN - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP55NE06L 60 V

 0.2. Size:261K  st
 stp55ne06-fp.pdf pdf_icon

STP55NE06

STP55NE06STP55NE06FPN-CHANNEL 60V - 0.019 - 55A TO-220/TO-220FP"SINGLE FEATURE SIZE" POWER MOSFETTable 1. General Features Figure 1. PackageType VDSS RDS(on) IDSTP55NE06 60 V

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 stb55nf06 stb55nf06-1 stp55nf06 stp55nf06fp.pdf pdf_icon

STP55NE06

STB55NF06 - STB55NF06-1STP55NF06 - STP55NF06FPN-channel 60V - 0.015 - 50A - D2PAK/I2PAK/TO-220/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB55NF06 60V

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History: VBNC1303 | IRFS4010PBF

Keywords - STP55NE06 MOSFET datasheet

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