STP55NE06 MOSFET Datasheet: N-Ch, 60V, 55A. Full specification with pinout and replacement list

STP55NE06 Specs and Replacement

Type Designator: STP55NE06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO220

STP55NE06 substitution

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STP55NE06 datasheet

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STP55NE06 STP55NE06FP N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE VDSS RDS(on) ID STP55NE06 60 V ... See More ⇒

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STP55NE06L STP55NE06LFP N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE VDSS RDS(on) ID STP55NE06L 60 V ... See More ⇒

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STP55NE06 STP55NE06FP N-CHANNEL 60V - 0.019 - 55A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS(on) ID STP55NE06 60 V ... See More ⇒

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STB55NF06 - STB55NF06-1 STP55NF06 - STP55NF06FP N-channel 60V - 0.015 - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB55NF06 60V ... See More ⇒