AO4420A Datasheet and Replacement
Type Designator: AO4420A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 13.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.4 nS
Cossⓘ - Output Capacitance: 256 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: SO8 SOIC8
AO4420A substitution
AO4420A Datasheet (PDF)
ao4420a.pdf

AO4420A30V N-Channel MOSFETGeneral Description Product SummaryThe AO4420A uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunityID = 13.7A (VGS = 10V)and body diode characteristics. This device isRDS(ON)
ao4420.pdf

AO442030V N-Channel MOSFETGeneral Description Product SummaryThe AO4420 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), shoot-through immunityID = 13.7A (VGS = 10V)and body diode characteristics. This device isRDS(ON)
ao4420.pdf

SMD Type MOSFETN-Channel MOSFETAO4420 (KO4420)SOP-8 Features VDS (V) = 30V ID = 13.7 A (VGS = 10V)1.50 0.15 RDS(ON) 10.5m (VGS = 10V) RDS(ON) 12m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V G
ao4420.pdf

AO4420www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-8
Datasheet: STP55NE06 , STP55NE06FP , SUD50N024-06P , SVF7N65T , SVF7N65F , AO3405 , AO3407G , AO3701 , TK10A60D , AO4433 , AO4456 , AO4458 , AO4474 , AO4607 , AO4614 , AO4617 , AO4708 .
History: CS4N65FA9HD
Keywords - AO4420A MOSFET datasheet
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History: CS4N65FA9HD



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