All MOSFET. AO4474 Datasheet

 

AO4474 Datasheet and Replacement


   Type Designator: AO4474
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 13.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 22 nC
   tr ⓘ - Rise Time: 6.3 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: SO8 SOIC8
 

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AO4474 Datasheet (PDF)

 ..1. Size:129K  aosemi
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AO4474

AO4474N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4474/L uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device VDS (V) = 30Vis suitable for use as a high side switch in SMPS and ID = 13.4A (VGS = 10V)general purpose applications. RDS(ON)

 9.1. Size:158K  aosemi
ao4472.pdf pdf_icon

AO4474

AO4472 N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AO4472 uses advanced trench technology to provide VDS (V) = 30Vexcellent RDS(ON), shoot-through immunity, body diode www.DataSheet4U.comID = 19A (VGS = 10V)characteristics and ultra-low gate resistance. This device is RDS(ON)

 9.2. Size:365K  aosemi
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AO4474

AO4476A 30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO4476A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 15Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)

 9.3. Size:192K  aosemi
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AO4474

AO447830V N-Channel MOSFETGeneral Description Product SummaryThe AO4478 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge. ThisID = 9A (VGS = 10V)device is suitable for use as general puspose, PWM andRDS(ON)

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: NCEP02580 | AO4912

Keywords - AO4474 MOSFET datasheet

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