AO4726 MOSFET Datasheet: N-Ch, 30V, 18A. Full specification with pinout and replacement list

AO4726 Specs and Replacement

Type Designator: AO4726

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.4 nS

Cossⓘ - Output Capacitance: 590 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: SO8 SOIC8

AO4726 substitution

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AO4726 datasheet

..1. Size:178K aosemi
ao4726.pdf pdf_icon

AO4726 30V N-Channel MOSFET SRFET TM General Description Product Summary TM VDS (V) = 30V SRFET The AO4726 uses advanced trench ID =18A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate charge. RDS(ON) ... See More ⇒

9.1. Size:178K aosemi
ao4724.pdf pdf_icon

AO4724 30V N-Channel MOSFET SRFET TM General Description Product Summary TM VDS (V) = 30V SRFET The AO4724 uses advanced trench ID = 10.5A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate RDS(ON) ... See More ⇒

9.2. Size:174K aosemi
ao4722.pdf pdf_icon

AO4722 30V N-Channel MOSFET SRFET TM General Description Product Summary TM VDS (V) = 30V SRFET The AO4722 uses advanced trench ID =11.6A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and RDS(ON) ... See More ⇒

9.3. Size:199K aosemi
ao4720.pdf pdf_icon

AO4720 30V N-Channel MOSFET SRFET TM General Description Product Summary TM VDS (V) = 30V SRFET The AO4720 uses advanced trench ID =13A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate RDS(ON) ... See More ⇒