AO4728 MOSFET. Datasheet pdf. Equivalent
Type Designator: AO4728
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 60 nC
trⓘ - Rise Time: 10.7 nS
Cossⓘ - Output Capacitance: 693 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm
Package: SOIC8
AO4728 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AO4728 Datasheet (PDF)
ao4728.pdf
AO472830V N-Channel MOSFETSRFET TM General Description Product SummaryVDS (V) = 30VSRFETTM AO4728 uses advanced trench technologyID = 20A (VGS = 10V)with a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device isRDS(ON)
ao4728.pdf
AO4728www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO-
ao4724.pdf
AO472430V N-Channel MOSFETSRFET TM General Description Product SummaryTMVDS (V) = 30VSRFET The AO4724 uses advanced trenchID = 10.5A (VGS = 10V)technology with a monolithically integrated Schottkydiode to provide excellent RDS(ON),and low gateRDS(ON)
ao4722.pdf
AO472230V N-Channel MOSFETSRFET TM General Description Product SummaryTMVDS (V) = 30VSRFET The AO4722 uses advanced trenchID =11.6A (VGS = 10V)technology with a monolithically integratedSchottky diode to provide excellent RDS(ON),andRDS(ON)
ao4720.pdf
AO472030V N-Channel MOSFETSRFET TM General Description Product SummaryTMVDS (V) = 30VSRFET The AO4720 uses advanced trenchID =13A (VGS = 10V)technology with a monolithically integrated Schottkydiode to provide excellent RDS(ON),and low gateRDS(ON)
ao4726.pdf
AO472630V N-Channel MOSFETSRFET TM General Description Product SummaryTMVDS (V) = 30VSRFET The AO4726 uses advanced trenchID =18A (VGS = 10V)technology with a monolithically integrated Schottkydiode to provide excellent RDS(ON) and low gate charge.RDS(ON)
ao4724.pdf
SMD Type MOSFETN-Channel MOSFETAO4724 (KO4724)SOP-8 Unit:mm Features VDS (V) = 30V ID = 10.5 A (VGS = 10V) 0.151.50 RDS(ON) 17.5m (VGS = 10V) RDS(ON) 29m (VGS = 4.5V)1 Source 5 Drain6 Drain2 SourceSRFETTM Soft Recovery MOSFET:Integrated Schottky Diode7 Drain3 Source8 Drain4 GateDG S Absolute Maximum Ratings Ta = 25
ao4720.pdf
SMD Type MOSFET N-Channel MOSFETAO4720 (KO4720)SOP-8Unit:mm Features VDS (V) = 30V ID = 13 A (VGS = 10V)1.50 0.15 RDS(ON) 11m (VGS = 10V) RDS(ON) 17.5m (VGS = 4.5V)1 Source 5 Drain6 Drain2 SourceSRFETTM Soft Recovery MOSFET:Integrated Schottky Diode7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
