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AO4916 Specs and Replacement

Type Designator: AO4916

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0205 Ohm

Package: SOIC8

AO4916 substitution

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AO4916 datasheet

 ..1. Size:651K  aosemi
ao4916.pdf pdf_icon

AO4916

AO4916 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary The AO4916 uses advanced trench technology to provide Q1(N-Channel) Q2(N-Channel) excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V 30V make a compact and efficient switch and synchronous ID= 8A (VGS=10V) 8A (VGS=10V) rectifier combination for use in DC-DC converters. A RDS(ON) ... See More ⇒

 0.1. Size:370K  aosemi
ao4916l.pdf pdf_icon

AO4916

Rev 3 Nov 2004 AO4916, AO4916L( Green Product ) Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS (V) = 30V The AO4916 uses advanced trench technology to ID = 8.5A provide excellent R DS(ON) and low gate charge. The RDS(ON) ... See More ⇒

 9.1. Size:650K  aosemi
ao4914.pdf pdf_icon

AO4916

AO4914 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary The AO4914 uses advanced trench technology to provide Q1(N-Channel) Q2(N-Channel) excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V 30V make a compact and efficient switch and synchronous ID= 8A (VGS=10V) 8A (VGS=10V) rectifier combination for use in DC-DC converters. A RDS(ON) ... See More ⇒

 9.2. Size:3080K  kexin
ao4914.pdf pdf_icon

AO4916

SMD Type MOSFET Dual N-Channel MOSFET AO4914 (KO4914) SOP-8 Unit mm Features N-Channel 1 VDS (V) = 30V 1.50 0.15 ID = 8 A (VGS = 10V) RDS(ON) 20.5m (VGS = 10V) 1 S1/A 5 D2 RDS(ON) 28m (VGS = 4.5V) 2 G1 6 D2 7 D1/K VDS (V) = 30V, IF = 3A, VF... See More ⇒

Detailed specifications: AO4607, AO4614, AO4617, AO4708, AO4722, AO4726, AO4728, AO4772, TK10A60D, AO4916L, AO4926, AO4928, AO6806, AO8803, AO8806, AO8816, AO8842

Keywords - AO4916 MOSFET specs

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