All MOSFET. AO4928 Datasheet

 

AO4928 Datasheet and Replacement


   Type Designator: AO4928
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 9.5(7.3) A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.7(3.5) nS
   Cossⓘ - Output Capacitance: 224(8) pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016(0.024) Ohm
   Package: SOIC8
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AO4928 Datasheet (PDF)

 ..1. Size:237K  aosemi
 ao4928.pdf pdf_icon

AO4928

AO4928Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4928 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The two VDS (V) = 30V VDS(V) = 30VMOSFETs make a compact and efficient switch and ID = 9A ID=7.3A (VGS = 10V)synchronous rectifier combination for use in DC-DCRDS(ON)

 9.1. Size:239K  aosemi
 ao4926.pdf pdf_icon

AO4928

AO4926Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4926 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30Vtwo MOSFETs make a compact and efficient switch ID = 9.5A ID=7.3A (VGS = 10V)and synchronous rectifier combination for use in DC-RDS(ON)

 9.2. Size:239K  aosemi
 ao4922.pdf pdf_icon

AO4928

AO4922Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4922 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30Vtwo MOSFETs make a compact and efficient switch ID = 9A ID=7.3A (VGS = 10V)and synchronous rectifier combination for use in DC-RDS(ON)

 9.3. Size:256K  aosemi
 ao4924.pdf pdf_icon

AO4928

AO4924Asymmetric Dual N-Channel MOSFETSRFET TM General Description Product SummaryThe AO4924 uses advanced trench technology to FET1 FET2provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30Vtwo MOSFETs make a compact and efficient switch ID = 9A ID=7.3A (VGS = 10V)and synchronous rectifier combination for use in DC-RDS(ON)

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History: UF830G-T2Q-T | IRFS9233 | PH3855L | RFD16N05SM | HY5110A | FHD100N03A | IXFH9N80

Keywords - AO4928 MOSFET datasheet

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