AO4928 PDF and Equivalents Search

 

AO4928 Specs and Replacement

Type Designator: AO4928

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 9.5(7.3) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.7(3.5) nS

Cossⓘ - Output Capacitance: 224(8) pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016(0.024) Ohm

Package: SOIC8

AO4928 substitution

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AO4928 datasheet

 ..1. Size:237K  aosemi
 ao4928.pdf pdf_icon

AO4928

AO4928 Asymmetric Dual N-Channel MOSFET SRFET TM General Description Product Summary The AO4928 uses advanced trench technology to FET1 FET2 provide excellent R DS(ON) and low gate charge. The two VDS (V) = 30V VDS(V) = 30V MOSFETs make a compact and efficient switch and ID = 9A ID=7.3A (VGS = 10V) synchronous rectifier combination for use in DC-DC RDS(ON) ... See More ⇒

 9.1. Size:239K  aosemi
 ao4926.pdf pdf_icon

AO4928

AO4926 Asymmetric Dual N-Channel MOSFET SRFET TM General Description Product Summary The AO4926 uses advanced trench technology to FET1 FET2 provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30V two MOSFETs make a compact and efficient switch ID = 9.5A ID=7.3A (VGS = 10V) and synchronous rectifier combination for use in DC- RDS(ON) ... See More ⇒

 9.2. Size:239K  aosemi
 ao4922.pdf pdf_icon

AO4928

AO4922 Asymmetric Dual N-Channel MOSFET SRFET TM General Description Product Summary The AO4922 uses advanced trench technology to FET1 FET2 provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30V two MOSFETs make a compact and efficient switch ID = 9A ID=7.3A (VGS = 10V) and synchronous rectifier combination for use in DC- RDS(ON) ... See More ⇒

 9.3. Size:256K  aosemi
 ao4924.pdf pdf_icon

AO4928

AO4924 Asymmetric Dual N-Channel MOSFET SRFET TM General Description Product Summary The AO4924 uses advanced trench technology to FET1 FET2 provide excellent R DS(ON) and low gate charge. The VDS (V) = 30V VDS(V) = 30V two MOSFETs make a compact and efficient switch ID = 9A ID=7.3A (VGS = 10V) and synchronous rectifier combination for use in DC- RDS(ON) ... See More ⇒

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Detailed specifications: AO4708, AO4722, AO4726, AO4728, AO4772, AO4916, AO4916L, AO4926, 4N60, AO6806, AO8803, AO8806, AO8816, AO8842, AOD400, AOD402, AOD404

Keywords - AO4928 MOSFET specs

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