All MOSFET. IRF840 Datasheet

 

IRF840 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF840

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 63(max) nC

Rise Time (tr): 23 nS

Drain-Source Capacitance (Cd): 310 pF

Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm

Package: TO220AB

IRF840 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF840 Datasheet (PDF)

..1. irf840 irf841 irf840fi irf841fi.pdf Size:99K _1

IRF840 IRF840

IRF840/FIIRF841/FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRF840 500 V

..2. irf840.pdf Size:170K _international_rectifier

IRF840 IRF840

..3. irf840 1.pdf Size:60K _philips

IRF840 IRF840

Philips Semiconductors Product specification PowerMOS transistor IRF840 Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V High thermal cycling performance Low thermal resistance ID = 8.5 AgRDS(ON) 0.85 sGENERAL DESCRIPTION PINNING SOT78 (TO220AB)N-channel, enhancement mode PIN DESCRIPT

..4. irf840.pdf Size:360K _st

IRF840 IRF840

IRF840N-CHANNEL 500V - 0.75 - 8ATO-220PowerMeshII MOSFETTYPE VDSS RDS(on) IDIRF840 500 V

..5. irf840 irf841 irf842 irf843-fi.pdf Size:471K _st

IRF840 IRF840

..6. irf840 sihf840.pdf Size:195K _vishay

IRF840 IRF840

IRF840, SiHF840Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.85RoHS* Fast SwitchingQg (Max.) (nC) 63COMPLIANT Ease of ParallelingQgs (nC) 9.3Qgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDE

..7. irf840.pdf Size:95K _ape

IRF840 IRF840

IRF840RoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8AGSDescriptionGTO-220(P)DAPEC MOSFET provide the power designer with the best combination of fastSswitching , lower on-resistance and reasonable cost.

..8. irf840.pdf Size:771K _blue-rocket-elect

IRF840 IRF840

IRF840 Rev.H Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi

..9. irf840.pdf Size:141K _inchange_semiconductor

IRF840 IRF840

INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor IRF840 FEATURES Drain Current ID=8.0A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.85(Max) DESCRITION Designed for high voltage, high speed switching power applic- ations such as switching regulators, converters, solenoid an

0.1. irf840lc.pdf Size:194K _international_rectifier

IRF840 IRF840

0.2. irf840apbf.pdf Size:185K _international_rectifier

IRF840 IRF840

PD- 94829SMPS MOSFETIRF840APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.85 8.0Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andSDA

 0.3. irf840s.pdf Size:172K _international_rectifier

IRF840 IRF840

0.4. irf840pbf.pdf Size:899K _international_rectifier

IRF840 IRF840

PD - 94882IRF840PbF Lead-Freewww.irf.com 112/10/03IRF840PbF2 www.irf.comIRF840PbFwww.irf.com 3IRF840PbF4 www.irf.comIRF840PbFwww.irf.com 5IRF840PbF6 www.irf.comIRF840PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.139)2.62 (.103) 4.20 (.165)- A -

 

 0.5. irf840lcs.pdf Size:173K _international_rectifier

IRF840 IRF840

PD- 93766IRF840LCS IRF840LCLHEXFET Power MOSFET Ultra Low Gate ChargeD Reduced Gate Drive RequirementVDSS = 500V Enhanced 30V VGS Rating Reduced CISS, COSS, CRSSRDS(on) = 0.85 Extremely High Frequency OperationG Repetitive Avalanche RatedID = 8.0ADescription SThis new series of low charge HEXFET power MOSFETsachieve significant lower gate charge over con

0.6. irf840a.pdf Size:199K _international_rectifier

IRF840 IRF840

PD- 94829SMPS MOSFETIRF840APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.85 8.0Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andSDA

0.7. irf840aspbf irf840alpbf.pdf Size:673K _international_rectifier

IRF840 IRF840

PD- 95143IRF840ASPbFSMPS MOSFET IRF840ALPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.85 8.0A High Speed Power Switching Lead-FreeBenefits Low Gate Charge Qg Results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andD

0.8. irf840spbf.pdf Size:666K _international_rectifier

IRF840 IRF840

PD-95136IRF840SPbF Lead-FreeD2Pak05/10/04Document Number: 91071 www.vishay.com1IRF840SPbFDocument Number: 91071 www.vishay.com2IRF840SPbFDocument Number: 91071 www.vishay.com3IRF840SPbFDocument Number: 91071 www.vishay.com4IRF840SPbFDocument Number: 91071 www.vishay.com5IRF840SPbFDocument Number: 91071 www.vishay.com6IRF840SPbFDocument Numb

0.9. irf840lcpbf.pdf Size:986K _international_rectifier

IRF840 IRF840

PD - 94883IRF840LCPbF Lead-Free12/11/03Document Number: 91067 www.vishay.com1IRF840LCPbFDocument Number: 91067 www.vishay.com2IRF840LCPbFDocument Number: 91067 www.vishay.com3IRF840LCPbFDocument Number: 91067 www.vishay.com4IRF840LCPbFDocument Number: 91067 www.vishay.com5IRF840LCPbFDocument Number: 91067 www.vishay.com6IRF840LCPbFDocument Nu

0.10. irf840lcspbf irf840lclpbf.pdf Size:458K _international_rectifier

IRF840 IRF840

PD- 95759IRF840LCSPbFIRF840LCLPbF Lead-Free8/24/04Document Number: 91068 www.vishay.com1IRF840LCS/LPbFDocument Number: 91068 www.vishay.com2IRF840LCS/LPbFDocument Number: 91068 www.vishay.com3IRF840LCS/LPbFDocument Number: 91068 www.vishay.com4IRF840LCS/LPbFDocument Number: 91068 www.vishay.com5IRF840LCS/LPbFDocument Number: 91068 www.vishay.com

0.11. irf840f.pdf Size:188K _st

IRF840 IRF840

IRF840/FIIRF841/FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRF840 500 V

0.12. irf840-fi irf841-fi.pdf Size:188K _st

IRF840 IRF840

IRF840/FIIRF841/FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRF840 500 V

0.13. irf840a.pdf Size:99K _st

IRF840 IRF840

IRF840/FIIRF841/FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRF840 500 V

0.14. irf840b irfs840b.pdf Size:911K _fairchild_semi

IRF840 IRF840

November 2001IRF840B/IRFS840B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to

0.15. irf840a.pdf Size:941K _samsung

IRF840 IRF840

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

0.16. irfp440-443 irf840-843.pdf Size:192K _samsung

IRF840 IRF840

0.17. irf840lclpbf irf840lcspbf sihf840lcl sihf840lcs.pdf Size:196K _vishay

IRF840 IRF840

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 500 Ultra Low Gate ChargeRDS(on) ()VGS = 10 V 0.85 Reduced Gate Drive RequirementQg (Max.) (nC) 39 Enhanced 30 V VGS Rating Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency Operatio

0.18. irf840l sihf840l.pdf Size:161K _vishay

IRF840 IRF840

IRF840L, SiHF840LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.85 Repetitive Avalanche RatedQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 9.3 Ease of ParallelingQgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to

0.19. irf840a sihf840a.pdf Size:206K _vishay

IRF840 IRF840

IRF840A, SiHF840AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 38COMPLIANTRuggednessQgs (nC) 9.0 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 18and CurrentConfigura

0.20. irf840s sihf840s.pdf Size:1039K _vishay

IRF840 IRF840

IRF840S, SiHF840SVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface MountVDS (V) 500 Available in Tape and Reel AvailableRDS(on) ()VGS = 10 V 0.85 Dynamic dV/dt RatingRoHS*Qg (Max.) (nC) 63COMPLIANT Repetitive Avalanche RatedQgs (nC) 9.3 Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Single Simple Drive Requireme

0.21. irf840spbf sihf840s.pdf Size:194K _vishay

IRF840 IRF840

IRF840S, SiHF840SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500Definition Surface MountRDS(on) ()VGS = 10 V 0.85 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt RatingQgs (nC) 9.3 Repetitive Avalanche RatedQgd (nC) 32 Fast Switching Ease of ParallelingConfiguration Sin

0.22. irf840as sihf840as irf840al sihf840al.pdf Size:206K _vishay

IRF840 IRF840

IRF840AS, SiHF840AS, IRF840AL, SiHF840ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.0RuggednessQgd (nC) 18 Fully Characterized Capa

0.23. irf840alpbf irf840aspbf sihf840al sihf840as.pdf Size:199K _vishay

IRF840 IRF840

IRF840AS, SiHF840AS, IRF840AL, SiHF840ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.0RuggednessQgd (nC) 18 Fully Characterized Capa

0.24. irf840b.pdf Size:284K _vishay

IRF840 IRF840

IRF840Bwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.85- Low Input Capacitance (Ciss)Qg (max.) (nC) 30- Reduced Capacitive Switching LossesQgs (nC) 4- High Body Diode RuggednessQgd (nC) 7- Avalanche Energy Rated (UIS)Con

0.25. irf840lc sihf840lc.pdf Size:197K _vishay

IRF840 IRF840

IRF840LC, SiHF840LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 39 Extremely High Frequency OperationQgs (nC) 10 Repetitive Avalanche RatedQgd (nC) 19 Com

0.26. irf840lc irf840lcpbf sihf840lc.pdf Size:198K _vishay

IRF840 IRF840

IRF840LC, SiHF840LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 39 Extremely High Frequency OperationQgs (nC) 10 Repetitive Avalanche RatedQgd (nC) 19 Com

0.27. irf840lpbf sihf840l.pdf Size:162K _vishay

IRF840 IRF840

IRF840L, SiHF840LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.85 Repetitive Avalanche RatedQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 9.3 Ease of ParallelingQgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to

0.28. hirf840.pdf Size:47K _hsmc

IRF840 IRF840

Spec. No. : MOS200505HI-SINCERITYIssued Date : 2005.06.01Revised Date : 2005.06.08MICROELECTRONICS CORP.Page No. : 1/4HIRF840 Series Pin AssignmentHIRF840 / HIRF840FTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis N - Channel MOSFETs provide the designer with the bestcombination of fast swi

0.29. irf840s.pdf Size:94K _ape

IRF840 IRF840

IRF840SRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8AGSDescriptionAPEC MOSFET provide the power designer with the best combination of fastGswitching , lower on-resistance and reasonable cost.DS TO-263(S)

0.30. irf840i.pdf Size:152K _ape

IRF840 IRF840

IRF840IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8AGSDescriptionAPEC MOSFET provide the power designer with the best combinationGof fast switching , lower on-resistance and reasonableDTO-220CFM(I)ST

0.31. irf840s.pdf Size:1503K _kexin

IRF840 IRF840

SMD Type MOSFETN-Channel MOSFETIRF840S (KRF840S) Features VDS (V) =500V ID =8 A (VGS = 10V) RDS(ON) 0.85 (VGS = 10V) Fast switching Low thermal resistancedgs Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 500V Gate-Source Voltage VGS 20 Ta = 25 8 Continuous Drain Current ID Ta = 1

0.32. irf840lc.pdf Size:206K _inchange_semiconductor

IRF840 IRF840

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF840LCFEATURESWith low gate drive requirementsUltra low gate chargeExtremely high frequency operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsFor DC-DC converterABSOLUTE MAXIMUM RATINGS(T =25)aSY

0.33. irf840a.pdf Size:193K _inchange_semiconductor

IRF840 IRF840

isc N-Channel Mosfet Transistor IRF840AFEATURESDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch mode power supplyUninterruptable power supplyHigh speed power switchingABSOLUTE MAXIMUM

Datasheet: IRF830AL , IRF830AS , IRF830FI , IRF830S , IRF831 , IRF831FI , IRF832 , IRF833 , IRF9540N , 2SK2209-01R , IRF840A , IRF840AS , IRF840FI , IRF840S , IRF841 , IRF841FI , IRF842 .

 

 
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