All MOSFET. IRF840 Datasheet

 

IRF840 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF840
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO220AB

 IRF840 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF840 Datasheet (PDF)

 ..1. Size:99K  1
irf840 irf841 irf840fi irf841fi.pdf pdf_icon

IRF840
IRF840

IRF840/FIIRF841/FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRF840 500 V

 ..2. Size:170K  international rectifier
irf840.pdf pdf_icon

IRF840
IRF840

 ..3. Size:899K  international rectifier
irf840pbf.pdf pdf_icon

IRF840
IRF840

PD - 94882IRF840PbF Lead-Freewww.irf.com 112/10/03IRF840PbF2 www.irf.comIRF840PbFwww.irf.com 3IRF840PbF4 www.irf.comIRF840PbFwww.irf.com 5IRF840PbF6 www.irf.comIRF840PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.139)2.62 (.103) 4.20 (.165)- A -

 ..4. Size:60K  philips
irf840 1.pdf pdf_icon

IRF840
IRF840

Philips Semiconductors Product specification PowerMOS transistor IRF840 Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V High thermal cycling performance Low thermal resistance ID = 8.5 AgRDS(ON) 0.85 sGENERAL DESCRIPTION PINNING SOT78 (TO220AB)N-channel, enhancement mode PIN DESCRIPT

Datasheet: IRF830AL , IRF830AS , IRF830FI , IRF830S , IRF831 , IRF831FI , IRF832 , IRF833 , 8N60 , 2SK2209-01R , IRF840A , IRF840AS , IRF840FI , IRF840S , IRF841 , IRF841FI , IRF842 .

 

 
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