IRF840 - описание и поиск аналогов

IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF840 500 V

PD - 94882 IRF840PbF Lead-Free www.irf.com 1 12/10/03 IRF840PbF 2 www.irf.com IRF840PbF www.irf.com 3 IRF840PbF 4 www.irf.com IRF840PbF www.irf.com 5 IRF840PbF 6 www.irf.com IRF840PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A -

Philips Semiconductors Product specification PowerMOS transistor IRF840 Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V High thermal cycling performance Low thermal resistance ID = 8.5 A g RDS(ON) 0.85 s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel, enhancement mode PIN DESCRIPT

IRF840 N-CHANNEL 500V - 0.75 - 8ATO-220 PowerMesh II MOSFET TYPE VDSS RDS(on) ID IRF840 500 V

IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.85 RoHS* Fast Switching Qg (Max.) (nC) 63 COMPLIANT Ease of Paralleling Qgs (nC) 9.3 Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DE

IRF840 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8A G S Description G TO-220(P) D APEC MOSFET provide the power designer with the best combination of fast S switching , lower on-resistance and reasonable cost.

IRF840 Rev.H Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi

IRF840 SiliconN-Channel Power MOSFET Description The IRF840 uses advanced technology and design to provide excellent R . It can be used in a wide variety of applications. DS(ON) General Features V =500V,I =8A DS D Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switching application Adapter and charger Electrical

INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor IRF840 FEATURES Drain Current ID=8.0A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) Static Drain-Source On-Resistance RDS(on) = 0.85 (Max) DESCRITION Designed for high voltage, high speed switching power applic- ations such as switching regulators, converters, solenoid an

PD- 95759 IRF840LCSPbF IRF840LCLPbF Lead-Free 8/24/04 Document Number 91068 www.vishay.com 1 IRF840LCS/LPbF Document Number 91068 www.vishay.com 2 IRF840LCS/LPbF Document Number 91068 www.vishay.com 3 IRF840LCS/LPbF Document Number 91068 www.vishay.com 4 IRF840LCS/LPbF Document Number 91068 www.vishay.com 5 IRF840LCS/LPbF Document Number 91068 www.vishay.com

PD- 93766 IRF840LCS IRF840LCL HEXFET Power MOSFET Ultra Low Gate Charge D Reduced Gate Drive Requirement VDSS = 500V Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS RDS(on) = 0.85 Extremely High Frequency Operation G Repetitive Avalanche Rated ID = 8.0A Description S This new series of low charge HEXFET power MOSFETs achieve significant lower gate charge over con

PD - 94883 IRF840LCPbF Lead-Free 12/11/03 Document Number 91067 www.vishay.com 1 IRF840LCPbF Document Number 91067 www.vishay.com 2 IRF840LCPbF Document Number 91067 www.vishay.com 3 IRF840LCPbF Document Number 91067 www.vishay.com 4 IRF840LCPbF Document Number 91067 www.vishay.com 5 IRF840LCPbF Document Number 91067 www.vishay.com 6 IRF840LCPbF Document Nu

PD- 94829 SMPS MOSFET IRF840APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.85 8.0A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and S D A

PD- 95143 IRF840ASPbF SMPS MOSFET IRF840ALPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.85 8.0A High Speed Power Switching Lead-Free Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and D

PD-95136 IRF840SPbF Lead-Free D2Pak 05/10/04 Document Number 91071 www.vishay.com 1 IRF840SPbF Document Number 91071 www.vishay.com 2 IRF840SPbF Document Number 91071 www.vishay.com 3 IRF840SPbF Document Number 91071 www.vishay.com 4 IRF840SPbF Document Number 91071 www.vishay.com 5 IRF840SPbF Document Number 91071 www.vishay.com 6 IRF840SPbF Document Numb

PD- 94829 SMPS MOSFET IRF840APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.85 8.0A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and S D A

IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF840 500 V

IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF840 500 V

IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF840 500 V

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 0.638 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 38 COMPLIANT Ruggedness Qgs (nC) 9.0 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 18 and Current Configura

IRF840B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.85 - Low Input Capacitance (Ciss) Qg (max.) (nC) 30 - Reduced Capacitive Switching Losses Qgs (nC) 4 - High Body Diode Ruggedness Qgd (nC) 7 - Avalanche Energy Rated (UIS) Con

IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.85 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 39 Extremely High Frequency Operation Qgs (nC) 10 Repetitive Avalanche Rated Qgd (nC) 19 Com

IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mount VDS (V) 500 Available in Tape and Reel Available RDS(on) ( )VGS = 10 V 0.85 Dynamic dV/dt Rating RoHS* Qg (Max.) (nC) 63 COMPLIANT Repetitive Avalanche Rated Qgs (nC) 9.3 Fast Switching Qgd (nC) 32 Ease of Paralleling Configuration Single Simple Drive Requireme

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 9.0 Ruggedness Qgd (nC) 18 Fully Characterized Capa

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 500 Ultra Low Gate Charge RDS(on) ( )VGS = 10 V 0.85 Reduced Gate Drive Requirement Qg (Max.) (nC) 39 Enhanced 30 V VGS Rating Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operatio

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 9.0 Ruggedness Qgd (nC) 18 Fully Characterized Capa

IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition Surface Mount RDS(on) ( )VGS = 10 V 0.85 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt Rating Qgs (nC) 9.3 Repetitive Avalanche Rated Qgd (nC) 32 Fast Switching Ease of Paralleling Configuration Sin

IRF840L, SiHF840L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.85 Repetitive Avalanche Rated Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 9.3 Ease of Paralleling Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to

IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.85 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 39 Extremely High Frequency Operation Qgs (nC) 10 Repetitive Avalanche Rated Qgd (nC) 19 Com

IRF840L, SiHF840L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.85 Repetitive Avalanche Rated Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 9.3 Ease of Paralleling Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to

Spec. No. MOS200505 HI-SINCERITY Issued Date 2005.06.01 Revised Date 2005.06.08 MICROELECTRONICS CORP. Page No. 1/4 HIRF840 Series Pin Assignment HIRF840 / HIRF840F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This N - Channel MOSFETs provide the designer with the best combination of fast swi

IRF840S RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8A G S Description APEC MOSFET provide the power designer with the best combination of fast G switching , lower on-resistance and reasonable cost. D S TO-263(S)

IRF840I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8A G S Description APEC MOSFET provide the power designer with the best combination G of fast switching , lower on-resistance and reasonable D TO-220CFM(I) S T

SMD Type MOSFET N-Channel MOSFET IRF840S (KRF840S) Features VDS (V) =500V ID =8 A (VGS = 10V) RDS(ON) 0.85 (VGS = 10V) Fast switching Low thermal resistance d g s Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS 20 Ta = 25 8 Continuous Drain Current ID Ta = 1

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF840LC FEATURES With low gate drive requirements Ultra low gate charge Extremely high frequency operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications For DC-DC converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

isc N-Channel Mosfet Transistor IRF840A FEATURES Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switch mode power supply Uninterruptable power supply High speed power switching ABSOLUTE MAXIMUM