Справочник MOSFET. IRF840

 

IRF840 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF840
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 125 W
   Предельно допустимое напряжение сток-исток |Uds|: 500 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 8 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 63(max) nC
   Время нарастания (tr): 23 ns
   Выходная емкость (Cd): 310 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.85 Ohm
   Тип корпуса: TO220AB

 Аналог (замена) для IRF840

 

 

IRF840 Datasheet (PDF)

 ..1. Size:99K  1
irf840 irf841 irf840fi irf841fi.pdf

IRF840 IRF840

IRF840/FIIRF841/FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRF840 500 V

 ..2. Size:170K  international rectifier
irf840.pdf

IRF840 IRF840

 ..3. Size:899K  international rectifier
irf840pbf.pdf

IRF840 IRF840

PD - 94882IRF840PbF Lead-Freewww.irf.com 112/10/03IRF840PbF2 www.irf.comIRF840PbFwww.irf.com 3IRF840PbF4 www.irf.comIRF840PbFwww.irf.com 5IRF840PbF6 www.irf.comIRF840PbFTO-220AB Package OutlineDimensions are shown in millimeters (inches)10.54 (.415) - B -3.78 (.149)10.29 (.405)2.87 (.113) 4.69 (.185)3.54 (.139)2.62 (.103) 4.20 (.165)- A -

 ..4. Size:60K  philips
irf840 1.pdf

IRF840 IRF840

Philips Semiconductors Product specification PowerMOS transistor IRF840 Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 500 V High thermal cycling performance Low thermal resistance ID = 8.5 AgRDS(ON) 0.85 sGENERAL DESCRIPTION PINNING SOT78 (TO220AB)N-channel, enhancement mode PIN DESCRIPT

 ..5. Size:360K  st
irf840.pdf

IRF840 IRF840

IRF840N-CHANNEL 500V - 0.75 - 8ATO-220PowerMeshII MOSFETTYPE VDSS RDS(on) IDIRF840 500 V

 ..6. Size:471K  st
irf840 irf841 irf842 irf843-fi.pdf

IRF840 IRF840

 ..7. Size:195K  vishay
irf840 sihf840.pdf

IRF840 IRF840

IRF840, SiHF840Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.85RoHS* Fast SwitchingQg (Max.) (nC) 63COMPLIANT Ease of ParallelingQgs (nC) 9.3Qgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDE

 ..8. Size:95K  ape
irf840.pdf

IRF840 IRF840

IRF840RoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8AGSDescriptionGTO-220(P)DAPEC MOSFET provide the power designer with the best combination of fastSswitching , lower on-resistance and reasonable cost.

 ..9. Size:771K  blue-rocket-elect
irf840.pdf

IRF840 IRF840

IRF840 Rev.H Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi

 ..10. Size:141K  inchange semiconductor
irf840.pdf

IRF840 IRF840

INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor IRF840 FEATURES Drain Current ID=8.0A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.85(Max) DESCRITION Designed for high voltage, high speed switching power applic- ations such as switching regulators, converters, solenoid an

 0.1. Size:458K  international rectifier
irf840lcspbf irf840lclpbf.pdf

IRF840 IRF840

PD- 95759IRF840LCSPbFIRF840LCLPbF Lead-Free8/24/04Document Number: 91068 www.vishay.com1IRF840LCS/LPbFDocument Number: 91068 www.vishay.com2IRF840LCS/LPbFDocument Number: 91068 www.vishay.com3IRF840LCS/LPbFDocument Number: 91068 www.vishay.com4IRF840LCS/LPbFDocument Number: 91068 www.vishay.com5IRF840LCS/LPbFDocument Number: 91068 www.vishay.com

 0.2. Size:173K  international rectifier
irf840lcs.pdf

IRF840 IRF840

PD- 93766IRF840LCS IRF840LCLHEXFET Power MOSFET Ultra Low Gate ChargeD Reduced Gate Drive RequirementVDSS = 500V Enhanced 30V VGS Rating Reduced CISS, COSS, CRSSRDS(on) = 0.85 Extremely High Frequency OperationG Repetitive Avalanche RatedID = 8.0ADescription SThis new series of low charge HEXFET power MOSFETsachieve significant lower gate charge over con

 0.3. Size:986K  international rectifier
irf840lcpbf.pdf

IRF840 IRF840

PD - 94883IRF840LCPbF Lead-Free12/11/03Document Number: 91067 www.vishay.com1IRF840LCPbFDocument Number: 91067 www.vishay.com2IRF840LCPbFDocument Number: 91067 www.vishay.com3IRF840LCPbFDocument Number: 91067 www.vishay.com4IRF840LCPbFDocument Number: 91067 www.vishay.com5IRF840LCPbFDocument Number: 91067 www.vishay.com6IRF840LCPbFDocument Nu

 0.4. Size:194K  international rectifier
irf840lc.pdf

IRF840 IRF840

 0.5. Size:185K  international rectifier
irf840apbf.pdf

IRF840 IRF840

PD- 94829SMPS MOSFETIRF840APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.85 8.0Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andSDA

 0.6. Size:172K  international rectifier
irf840s.pdf

IRF840 IRF840

 0.7. Size:673K  international rectifier
irf840aspbf irf840alpbf.pdf

IRF840 IRF840

PD- 95143IRF840ASPbFSMPS MOSFET IRF840ALPbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.85 8.0A High Speed Power Switching Lead-FreeBenefits Low Gate Charge Qg Results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andD

 0.8. Size:666K  international rectifier
irf840spbf.pdf

IRF840 IRF840

PD-95136IRF840SPbF Lead-FreeD2Pak05/10/04Document Number: 91071 www.vishay.com1IRF840SPbFDocument Number: 91071 www.vishay.com2IRF840SPbFDocument Number: 91071 www.vishay.com3IRF840SPbFDocument Number: 91071 www.vishay.com4IRF840SPbFDocument Number: 91071 www.vishay.com5IRF840SPbFDocument Number: 91071 www.vishay.com6IRF840SPbFDocument Numb

 0.9. Size:199K  international rectifier
irf840a.pdf

IRF840 IRF840

PD- 94829SMPS MOSFETIRF840APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.85 8.0Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance andSDA

 0.10. Size:188K  st
irf840-fi irf841-fi.pdf

IRF840 IRF840

IRF840/FIIRF841/FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRF840 500 V

 0.11. Size:188K  st
irf840f.pdf

IRF840 IRF840

IRF840/FIIRF841/FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRF840 500 V

 0.12. Size:99K  st
irf840a.pdf

IRF840 IRF840

IRF840/FIIRF841/FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRF840 500 V

 0.13. Size:911K  fairchild semi
irf840b irfs840b.pdf

IRF840 IRF840

November 2001IRF840B/IRFS840B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8.0A, 500V, RDS(on) = 0.8 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to

 0.14. Size:192K  samsung
irfp440-443 irf840-843.pdf

IRF840 IRF840

 0.15. Size:941K  samsung
irf840a.pdf

IRF840 IRF840

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val

 0.16. Size:206K  vishay
irf840a sihf840a.pdf

IRF840 IRF840

IRF840A, SiHF840AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 38COMPLIANTRuggednessQgs (nC) 9.0 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 18and CurrentConfigura

 0.17. Size:284K  vishay
irf840b.pdf

IRF840 IRF840

IRF840Bwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.85- Low Input Capacitance (Ciss)Qg (max.) (nC) 30- Reduced Capacitive Switching LossesQgs (nC) 4- High Body Diode RuggednessQgd (nC) 7- Avalanche Energy Rated (UIS)Con

 0.18. Size:198K  vishay
irf840lc irf840lcpbf sihf840lc.pdf

IRF840 IRF840

IRF840LC, SiHF840LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 39 Extremely High Frequency OperationQgs (nC) 10 Repetitive Avalanche RatedQgd (nC) 19 Com

 0.19. Size:1039K  vishay
irf840s sihf840s.pdf

IRF840 IRF840

IRF840S, SiHF840SVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Surface MountVDS (V) 500 Available in Tape and Reel AvailableRDS(on) ()VGS = 10 V 0.85 Dynamic dV/dt RatingRoHS*Qg (Max.) (nC) 63COMPLIANT Repetitive Avalanche RatedQgs (nC) 9.3 Fast SwitchingQgd (nC) 32 Ease of ParallelingConfiguration Single Simple Drive Requireme

 0.20. Size:206K  vishay
irf840as sihf840as irf840al sihf840al.pdf

IRF840 IRF840

IRF840AS, SiHF840AS, IRF840AL, SiHF840ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.0RuggednessQgd (nC) 18 Fully Characterized Capa

 0.21. Size:196K  vishay
irf840lclpbf irf840lcspbf sihf840lcl sihf840lcs.pdf

IRF840 IRF840

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 500 Ultra Low Gate ChargeRDS(on) ()VGS = 10 V 0.85 Reduced Gate Drive RequirementQg (Max.) (nC) 39 Enhanced 30 V VGS Rating Reduced Ciss, Coss, CrssQgs (nC) 10 Extremely High Frequency Operatio

 0.22. Size:199K  vishay
irf840alpbf irf840aspbf sihf840al sihf840as.pdf

IRF840 IRF840

IRF840AS, SiHF840AS, IRF840AL, SiHF840ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500DefinitionRDS(on) ()VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 9.0RuggednessQgd (nC) 18 Fully Characterized Capa

 0.23. Size:194K  vishay
irf840spbf sihf840s.pdf

IRF840 IRF840

IRF840S, SiHF840SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500Definition Surface MountRDS(on) ()VGS = 10 V 0.85 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt RatingQgs (nC) 9.3 Repetitive Avalanche RatedQgd (nC) 32 Fast Switching Ease of ParallelingConfiguration Sin

 0.24. Size:162K  vishay
irf840lpbf sihf840l.pdf

IRF840 IRF840

IRF840L, SiHF840LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.85 Repetitive Avalanche RatedQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 9.3 Ease of ParallelingQgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to

 0.25. Size:197K  vishay
irf840lc sihf840lc.pdf

IRF840 IRF840

IRF840LC, SiHF840LCVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive Requirement AvailableRDS(on) ()VGS = 10 V 0.85 Enhanced 30 V VGS RatingRoHS*COMPLIANT Reduced Ciss, Coss, CrssQg (Max.) (nC) 39 Extremely High Frequency OperationQgs (nC) 10 Repetitive Avalanche RatedQgd (nC) 19 Com

 0.26. Size:161K  vishay
irf840l sihf840l.pdf

IRF840 IRF840

IRF840L, SiHF840LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 500Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.85 Repetitive Avalanche RatedQg (Max.) (nC) 63 Fast SwitchingQgs (nC) 9.3 Ease of ParallelingQgd (nC) 32 Simple Drive RequirementsConfiguration Single Compliant to

 0.27. Size:47K  hsmc
hirf840.pdf

IRF840 IRF840

Spec. No. : MOS200505HI-SINCERITYIssued Date : 2005.06.01Revised Date : 2005.06.08MICROELECTRONICS CORP.Page No. : 1/4HIRF840 Series Pin AssignmentHIRF840 / HIRF840FTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThis N - Channel MOSFETs provide the designer with the bestcombination of fast swi

 0.28. Size:94K  ape
irf840s.pdf

IRF840 IRF840

IRF840SRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8AGSDescriptionAPEC MOSFET provide the power designer with the best combination of fastGswitching , lower on-resistance and reasonable cost.DS TO-263(S)

 0.29. Size:152K  ape
irf840i.pdf

IRF840 IRF840

IRF840IRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8AGSDescriptionAPEC MOSFET provide the power designer with the best combinationGof fast switching , lower on-resistance and reasonableDTO-220CFM(I)ST

 0.30. Size:1503K  kexin
irf840s.pdf

IRF840 IRF840

SMD Type MOSFETN-Channel MOSFETIRF840S (KRF840S) Features VDS (V) =500V ID =8 A (VGS = 10V) RDS(ON) 0.85 (VGS = 10V) Fast switching Low thermal resistancedgs Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 500V Gate-Source Voltage VGS 20 Ta = 25 8 Continuous Drain Current ID Ta = 1

 0.31. Size:206K  inchange semiconductor
irf840lc.pdf

IRF840 IRF840

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF840LCFEATURESWith low gate drive requirementsUltra low gate chargeExtremely high frequency operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsFor DC-DC converterABSOLUTE MAXIMUM RATINGS(T =25)aSY

 0.32. Size:193K  inchange semiconductor
irf840a.pdf

IRF840 IRF840

isc N-Channel Mosfet Transistor IRF840AFEATURESDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.85(Max)DS(on)Fast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitch mode power supplyUninterruptable power supplyHigh speed power switchingABSOLUTE MAXIMUM

Другие MOSFET... IRF830AL , IRF830AS , IRF830FI , IRF830S , IRF831 , IRF831FI , IRF832 , IRF833 , 8N60 , 2SK2209-01R , IRF840A , IRF840AS , IRF840FI , IRF840S , IRF841 , IRF841FI , IRF842 .

 

 
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