AOD606 MOSFET Datasheet: NP-Ch, 40V, 8A. Full specification with pinout and replacement list

AOD606 Specs and Replacement

Type Designator: AOD606

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO252-4L

AOD606 substitution

- MOSFET ⓘ Cross-Reference Search

AOD606 datasheet

..1. Size:239K aosemi
aod606.pdf pdf_icon

AOD606 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD606 uses advanced trench n-channel p-channel technology MOSFETs to provide VDS (V) = 40V -40V excellent RDS(ON) and low gate charge. ID = 8A (VGS=10V) -8A (VGS = -10V) The complementary MOSFETs may be RDS(ON) RDS(ON) used in H-bridge, Inverters and other ... See More ⇒

9.1. Size:524K aosemi
aod609g.pdf pdf_icon

AOD609G Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609G uses advanced trench technology n-channel MOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 40V, ID = 12A (VGS=10V) charge. The complementary MOSFETs may be used RDS(ON)... See More ⇒

9.2. Size:563K aosemi
aod607a.pdf pdf_icon

AOD607A 30V Complementary MOSFET General Description Product Summary Q1 Q2 VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 8A -12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

9.3. Size:486K aosemi
aod600a60 aoi600a60.pdf pdf_icon

AOD600A60/AOI600A60 TM 600V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒