AOD606 - описание и поиск аналогов

AOD606 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD606 uses advanced trench n-channel p-channel technology MOSFETs to provide VDS (V) = 40V -40V excellent RDS(ON) and low gate charge. ID = 8A (VGS=10V) -8A (VGS = -10V) The complementary MOSFETs may be RDS(ON) RDS(ON) used in H-bridge, Inverters and other

AOD609G Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609G uses advanced trench technology n-channel MOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 40V, ID = 12A (VGS=10V) charge. The complementary MOSFETs may be used RDS(ON)

AOD607A 30V Complementary MOSFET General Description Product Summary Q1 Q2 VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 8A -12A Low Gate Charge RDS(ON) (at VGS=10V)

AOD600A60/AOI600A60 TM 600V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max

AOD600A70/AOI600A70 TM 700V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

AOD600A60/AOI600A60 TM 600V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max

AOD609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609 uses advanced trench technology n-channel MOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 40V, ID = 12A (VGS=10V) charge. The complementary MOSFETs may be used RDS(ON)

AOD603A 60V Complementary MOSFET General Description Product Summary N-Channel P-Channel The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate VDS= 60V -60V charge. The complementary MOSFETs may be ID= 13A (VGS=10V) -13A (VGS=-10V) used in H-bridge, Inverters and other applications. RDS(ON) RDS(ON)

AOD600A70R/AOI600A70R TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

AOD600A70R/AOI600A70R TM 700V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

AOD600A70/AOI600A70 TM 700V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 34A Optimized switching parameters for better EMI RDS(ON),max

AOD603A www.VBsemi.tw N- and P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.030 at VGS = 10 V 35 TrenchFET Power MOSFET N-Channel 60 6 nC 0.033 at VGS = 4.5 V 30 100 % Rg and UIS Tested 0.050 at VGS = - 10 V - 19 APPLICATIONS P-Channel - 60 8 nC 0.060 at VGS = -