AOTF18N65L Specs and Replacement
Type Designator: AOTF18N65L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 83 nS
Cossⓘ - Output Capacitance: 271 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
Package: TO220F
AOTF18N65L substitution
- MOSFET ⓘ Cross-Reference Search
AOTF18N65L datasheet
aotf18n65l.pdf
AOTF18N65 650V,18A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOTF18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) ... See More ⇒
aotf18n65.pdf
AOTF18N65 650V,18A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOTF18N65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) ... See More ⇒
aotf18n65.pdf
isc N-Channel MOSFET Transistor AOTF18N65 FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R =0.39 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
aot13n50 aotf13n50.pdf
AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 13A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aotf125a60l.pdf
AOT125A60L/AOTF125A60L/AOB125A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aotf15b65m1.pdf
AOTF15B65M1 TM 650V, 15A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficien... See More ⇒
aotf15b60d.pdf
AOTF15B60D TM 600V, 15A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 15A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.6V of paralleling, minimal gate spike under high dV/dt conditions and resistance t... See More ⇒
aot16n50 aotf16n50.pdf
AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 16A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aotf10b60d2.pdf
AOTF10B60D2 TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TJ=25 C) 1.55V of paralleling, minimal gate spike under high dV/dt conditions and resistance... See More ⇒
aotf160a60l aot160a60l aob160a60l.pdf
AOTF160A60L/AOT160A60L/AOB160A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aotf12n65.pdf
AOT12N65/AOTF12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT12N65 & AOTF12N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aotf12n50.pdf
AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) ... See More ⇒
aotf12t50p.pdf
AOTF12T50P 500V,12A N-Channel MOSFET General Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max ... See More ⇒
aotf15s65l.pdf
AOT15S65/AOB15S65/AOTF15S65 TM 650V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced MOSTM high voltage IDM 60A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 17.2nC By provid... See More ⇒
aot12n65 aotf12n65 aotf12n65l aob12n65l.pdf
AOT12N65/AOTF12N65/AOTF12N65L/AOB12N65L 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT12N65 & AOTF12N65 & AOTF12N65L & AOB12N65L have been fabricated using an advanced ID (at VGS=10V) 12A high voltage MOSFET process that is designed to deliver RDS(ON) (at VGS=10V) ... See More ⇒
aotf15b65m3.pdf
AOTF15B65M3 TM 650V, 15A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V Breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.95V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienci... See More ⇒
aotf15s60.pdf
AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced MOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 16nC By providing... See More ⇒
aotf10b65m1.pdf
AOTF10B65M1 TM 650V, 10A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.6V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencie... See More ⇒
aot12n65 aotf12n65 aob12n65.pdf
AOT12N65/AOTF12N65/AOB12N65 650V, 12A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT12N65 & AOTF12N65 & AOB12N65 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) ... See More ⇒
aot11s60l aob11s60l aotf11s60l aotf11s60.pdf
AOT11S60L/AOB11S60L/AOTF11S60L/AOTF11S60 TM 600V 11A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60L & AOB11S60L & AOTF11S60L & AOTF11S60 have been fabricated using the advanced IDM 45A aMOSTM high voltage process that is designed to deliver high RDS(ON),max 0.399W levels of performance and robustness in switching applications. Qg,typ 11... See More ⇒
aotf10n90.pdf
AOTF10N90 900V, 10A N-Channel MOSFET General Description Product Summary VDS 1000V@150 The AOTF10N90 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 10A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) ... See More ⇒
aotf125a60fdl.pdf
AOTF125A60FDL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 56A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aotf160a60l.pdf
AOTF160A60L/AOT160A60L/AOB160A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 96A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aotf11n70.pdf
AOT11N70/AOTF11N70 700V,11A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT11N70 & AOTF11N70 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aotf14n50fd.pdf
AOT14N50FD/AOTF14N50FD 500V, 14A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT14N50FD/AOTF14N50FD have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 14A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aot15s65l aob15s65l aotf15s65l aotf15s65.pdf
AOT15S65L/AOB15S65L/AOTF15S65L/AOTF15S65 TM 650V 15A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT15S65L & AOB15S65L & AOTF15S65L & AOTF15S65 have been fabricated using the advanced IDM 60A aMOSTM high voltage process that is designed to deliver high RDS(ON),max 0.29W levels of performance and robustness in switching Qg,typ 17.2nC applicati... See More ⇒
aotf10n65.pdf
AOT10N65/AOTF10N65 650V,10A N-Channel MOSFET General Description Product Summary VDS 750V@150 The AOT10N65 & AOTF10N65 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 10A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aotf15b65mq1.pdf
AOTF15B65MQ1 TM 650V, 15A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc... See More ⇒
aotf11s65.pdf
AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 13.2nC By provi... See More ⇒
aotf12n60.pdf
AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aot125a60l aotf125a60l aob125a60l.pdf
AOT125A60L/AOTF125A60L/AOB125A60L TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 100A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aotf15b65m2.pdf
AOTF15B65M2 TM 650V, 15A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V breakdown voltage IC (TC=100 15A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc... See More ⇒
aot12n50 aob12n50 aotf12n50.pdf
AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) ... See More ⇒
aotf11n62.pdf
AOTF11N62 620V,11A N-Channel MOSFET General Description Product Summary VDS 720V@150 The AOTF11N62 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver ID (at VGS=10V) 11A high levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V) ... See More ⇒
aotf10b65m2.pdf
AOTF10B65M2 TM 650V, 10A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT( IGBT) technology 650V 650V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.6V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficiencies... See More ⇒
aotf10b60d.pdf
AOTF10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance ... See More ⇒
aot15s60l aob15s60l aotf15s60l aotf15s60.pdf
AOT15S60L/AOB15S60L/AOTF15S60L/AOTF15S60 TM 600V 15A a MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60L & AOB15S60L & AOTF15S60L & AOTF15S60 IDM 63A have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance RDS(ON),max 0.29W and robustness in switching applications. Qg,typ 16n... See More ⇒
aot15s60 aob15s60 aotf15s60.pdf
AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced MOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 16nC By providing... See More ⇒
aotf14n50.pdf
AOT14N50/AOB14N50/AOTF14N50 500V, 14A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT14N50 &AOB14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 14A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) ... See More ⇒
aotf12n30.pdf
AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET General Description Product Summary VDS 350V@150 The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11.5A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) ... See More ⇒
aotf160a60fdl.pdf
AOTF160A60FDL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 40A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aotf11n60.pdf
AOT11N60/AOTF11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOT11N60 & AOTF11N60 have been fabricated 700V@150 using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aotf190a60l.pdf
AOTF190A60L TM 600V, MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aotf11s60.pdf
AOT11S60/AOB11S60/AOTF11S60 TM 600V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT11S60& AOB11S60 & AOTF11S60 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 11nC By providin... See More ⇒
aotf190a60cl.pdf
AOTF190A60CL/AOT190A60CL/AOB190A60CL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aotf10t60.pdf
AOT10T60/AOTF10T60 600V,10A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V The AOT10T60 & AOTF10T60 are fabricated using an advanced high voltage MOSFET process that is designed IDM 40A to deliver high levels of performance and robustness in RDS(ON),max ... See More ⇒
aot11s65 aob11s65 aotf11s65.pdf
AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 13.2nC By provi... See More ⇒
aotf12n60fd.pdf
AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) ... See More ⇒
aotf15s65.pdf
AOT15S65/AOB15S65/AOTF15S65 TM 650V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT15S65 & AOB15S65 & AOTF15S65 have been fabricated using the advanced MOSTM high voltage IDM 60A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 17.2nC By provid... See More ⇒
aotf12t60.pdf
AOTF12T60 600V,12A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V Latest Trench Power AlphaMOS-II technology Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max ... See More ⇒
aot12n60 aotf12n60.pdf
AOT12N60/AOTF12N60 600V,12A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 12A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aotf10t60p.pdf
AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 40A Low Ciss and Crss RDS(ON),max ... See More ⇒
aotf190a60cl aot190a60cl aob190a60cl.pdf
AOTF190A60CL/AOT190A60CL/AOB190A60CL TM 600V, a MOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
aot14n50 aotf14n50.pdf
AOT14N50 / AOTF14N50 500V, 14A N-Channel MOSFET General Description Features The AOT14N50 & AOTF14N50 have been fabricated using an advanced high voltage MOSFET process VDS (V) = 600V@150 C that is designed to deliver high levels of performance ID=14A and robustness in popular AC-DC applications. RDS(ON)... See More ⇒
aotf15b60d2.pdf
AOTF15B60D2 TM 600V, 15A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 15A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TJ=25 C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance... See More ⇒
aotf10n60.pdf
AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) ... See More ⇒
aotf15s60l.pdf
AOT15S60/AOB15S60/AOTF15S60 TM 600V 15A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT15S60& AOB15S60 & AOTF15S60 have been fabricated using the advanced MOSTM high voltage IDM 63A process that is designed to deliver high levels of RDS(ON),max 0.29 performance and robustness in switching applications. Qg,typ 16nC By providing... See More ⇒
aotf11c60.pdf
AOT11C60/AOB11C60/AOTF11C60 600V,11A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700 The AOT11C60 & AOB11C60 & AOTF11C60 are fabricated using an advanced high voltage MOSFET IDM 80A process that is designed to deliver high levels of RDS(ON),max ... See More ⇒
aotf11s65l.pdf
AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 13.2nC By provi... See More ⇒
aotf13n50.pdf
AOT13N50/AOTF13N50 500V, 13A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT13N50 & AOTF13N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 13A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aotf12t60p.pdf
AOB12T60P/AOTF12T60P 600V,12A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max ... See More ⇒
aotf16n50.pdf
AOT16N50/AOTF16N50 500V, 16A N-Channel MOSFET General Description Product Summary VDS 600V@150 The AOT16N50 & AOTF16N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 16A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) ... See More ⇒
aot11n60l aotf11n60l aotf11n60.pdf
AOT11N60L/AOTF11N60L/AOTF11N60 600V,11A N-Channel MOSFET General Description Product Summary VDS The AOT11N60L & AOTF11N60L & AOTF11N60 700V@150 have been fabricated using an advanced high voltage ID (at VGS=10V) 11A MOSFET process that is designed to deliver high RDS(ON) (at VGS=10V) ... See More ⇒
aob12t60p aotf12t60p.pdf
AOB12T60P/AOTF12T60P 600V,12A N-Channel MOSFET General Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max ... See More ⇒
aotf10n50fd.pdf
AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary VDS 600V@150 The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 10A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) ... See More ⇒
aot12n30 aotf12n30.pdf
AOT12N30/AOTF12N30 300V,11.5A N-Channel MOSFET General Description Product Summary VDS 350V@150 The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed ID (at VGS=10V) 11.5A to deliver high levels of performance and robustness in RDS(ON) (at VGS=10V) ... See More ⇒
aotf12t50pl.pdf
AOTF12T50P 500V,12A N-Channel MOSFET General Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max ... See More ⇒
aotf10b65mq2.pdf
AOTF10B65MQ2 TM 650V, 10A AlphaIGBT With Soft and Fast Recovery Anti-Parallel Diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 10A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.6V C) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficienc... See More ⇒
aot10n60 aob10n60 aotf10n60.pdf
AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) ... See More ⇒
aotf12n65.pdf
isc N-Channel MOSFET Transistor AOTF12N65 FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.72 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
aotf12n50.pdf
isc N-Channel MOSFET Transistor AOTF12N50 FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.52 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
aotf15s65l.pdf
isc N-Channel MOSFET Transistor AOTF15S65L FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu... See More ⇒
aotf15s60.pdf
isc N-Channel MOSFET Transistor AOTF15S60 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
aotf10n90.pdf
isc N-Channel MOSFET Transistor AOTF10N90 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Static Drain-Source On-Resistance R =0.98 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
aotf11n70.pdf
isc N-Channel MOSFET Transistor AOTF11N70 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.87 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
aotf14n50fd.pdf
isc N-Channel MOSFET Transistor AOTF14N50FD FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.47 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p... See More ⇒
aotf10n65.pdf
isc N-Channel MOSFET Transistor AOTF10N65 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P... See More ⇒
aotf11s65.pdf
isc N-Channel MOSFET Transistor AOTF11S65 FEATURES Drain Current I =11A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.399 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
aotf12n60.pdf
isc N-Channel MOSFET Transistor AOTF12N60 FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
aotf11n62.pdf
isc N-Channel MOSFET Transistor AOTF11N62 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 620V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
aotf14n50.pdf
isc N-Channel MOSFET Transistor AOTF14N50 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
aotf12n30.pdf
isc N-Channel MOSFET Transistor AOTF12N30 FEATURES Drain Current I = 11.5A@ T =25 D C Drain Source Voltage- V = 300V(Min) DSS Static Drain-Source On-Resistance R = 0.42 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p... See More ⇒
aotf11n60.pdf
isc N-Channel MOSFET Transistor AOTF11N60 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.7 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
aotf190a60l.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor AOTF190A60L FEATURES With To-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT... See More ⇒
aotf11s60.pdf
isc N-Channel MOSFET Transistor AOTF11S60 FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.399 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu... See More ⇒
aotf12n60fd.pdf
isc N-Channel MOSFET Transistor AOTF12N60FD FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
aotf15s65.pdf
isc N-Channel MOSFET Transistor AOTF15S65 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
aotf10n60.pdf
isc N-Channel MOSFET Transistor AOTF10N60 FEATURES Drain Current I =10A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒
aotf15s60l.pdf
isc N-Channel MOSFET Transistor AOTF15S60L FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu... See More ⇒
aotf13n50.pdf
isc N-Channel MOSFET Transistor AOTF13N50 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.51 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒
aotf16n50.pdf
isc N-Channel Mosfet Transistor AOTF16N50 FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Low ON Resistance R = 0.37 (Max) DS(on) Low leakage current Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Designed for high efficiency switch mode power supply. ABSOLUTE... See More ⇒
aotf10n50fd.pdf
isc N-Channel MOSFET Transistor AOTF10N50FD FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.75 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p... See More ⇒
aotf12n65l.pdf
isc N-Channel MOSFET Transistor AOTF12N65L FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.72 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
aotf12t50pl.pdf
isc N-Channel MOSFET Transistor AOTF12T50PL FEATURES Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION General Lighting for LED and CCFL AC/DC Power supplies ABSOL... See More ⇒
Detailed specifications: AOD488, AOD490, AOD512, AOD518, AOD606, AOTF11S65L, AOTF15S60L, AOTF15S65L, 2N7002, AOTF20S60L, AOTF298L, AOTF7S60, AOTF7S60L, AOT400, AOT402, AOT426, AOT428
Keywords - AOTF18N65L MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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