AOTF18N65650V,18A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOTF18N65 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

AOTF18N65650V,18A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOTF18N65 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

isc N-Channel MOSFET Transistor AOTF18N65FEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =0.39(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

AOTF15B65M1TM 650V, 15A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT(IGBT) technology 650V 650V breakdown voltage IC (TC=100 15AC) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 1.7VC) High efficient turn-on di/dt controllability Low VCE(sat) enables high efficien

AOTF15B60DTM600V, 15A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 15Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.6Vof paralleling, minimal gate spike under high dV/dtconditions and resistance t

AOTF10B60D2TM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TJ=25C) 1.55Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

AOT12N65/AOTF12N65650V, 12A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT12N65 & AOTF12N65 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOT12N50/AOB12N50/AOTF12N50500V, 12A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT12N50 & AOB12N50 & AOTF12N50 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

AOTF12T50P500V,12A N-Channel MOSFETGeneral Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

AOT15S65/AOB15S65/AOTF15S65TM650V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT15S65 & AOB15S65 & AOTF15S65 have beenfabricated using the advanced MOSTM high voltage IDM 60Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 17.2nCBy provid

AOT15S60/AOB15S60/AOTF15S60TM600V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT15S60& AOB15S60 & AOTF15S60 have beenfabricated using the advanced MOSTM high voltage IDM 63Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 16nCBy providing

AOT12N65/AOTF12N65/AOB12N65650V, 12A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT12N65 & AOTF12N65 & AOB12N65 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

AOTF10N90900V, 10A N-Channel MOSFETGeneral Description Product Summary VDS1000V@150The AOTF10N90 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 10Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

AOT11N70/AOTF11N70700V,11A N-Channel MOSFETGeneral Description Product Summary VDS800V@150The AOT11N70 & AOTF11N70 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 11Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOT14N50FD/AOTF14N50FD500V, 14A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT14N50FD/AOTF14N50FD have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 14Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOT10N65/AOTF10N65650V,10A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT10N65 & AOTF10N65 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 10Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOT11S65/AOB11S65/AOTF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT11S65 & AOB11S65 & AOTF11S65 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 13.2nCBy provi

AOT12N60/AOTF12N60600V,12A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT12N60 & AOTF12N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOTF11N62620V,11A N-Channel MOSFETGeneral Description Product Summary VDS720V@150The AOTF11N62 has been fabricated using an advancedhigh voltage MOSFET process that is designed to deliver ID (at VGS=10V) 11Ahigh levels of performance and robustness in popular AC- RDS(ON) (at VGS=10V)

AOTF10B60DTM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

AOT14N50/AOB14N50/AOTF14N50500V, 14A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT14N50 &AOB14N50 & AOTF14N50 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 14Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

AOT12N30/AOTF12N30300V,11.5A N-Channel MOSFETGeneral Description Product Summary VDS350V@150The AOT12N30/AOTF12N30 is fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 11.5Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

AOT11N60/AOTF11N60600V,11A N-Channel MOSFETGeneral Description Product Summary VDSThe AOT11N60 & AOTF11N60 have been fabricated 700V@150using an advanced high voltage MOSFET process that is ID (at VGS=10V) 11Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOTF190A60LTM600V, MOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 700V Proprietary MOS5TM technology Low RDS(ON) IDM 80A Optimized switching parameters for better EMI RDS(ON),max

AOT11S60/AOB11S60/AOTF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT11S60& AOB11S60 & AOTF11S60 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 11nCBy providin

AOT10T60/AOTF10T60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700VThe AOT10T60 & AOTF10T60 are fabricated using anadvanced high voltage MOSFET process that is designed IDM 40Ato deliver high levels of performance and robustness in RDS(ON),max

AOT12N60FD/AOB12N60FD/AOTF12N60FD600V, 12A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT12N60FD/AOB12N60FD/AOTF12N60FD havebeen fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

AOT15S65/AOB15S65/AOTF15S65TM650V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT15S65 & AOB15S65 & AOTF15S65 have beenfabricated using the advanced MOSTM high voltage IDM 60Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 17.2nCBy provid

AOTF12T60600V,12A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700V Latest Trench Power AlphaMOS-II technology Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

AOT12N60/AOTF12N60600V,12A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT12N60 & AOTF12N60 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 12Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOT10T60P/AOB10T60P/AOTF10T60P600V,10A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 40A Low Ciss and Crss RDS(ON),max

AOTF15B60D2TM600V, 15A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 15Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TJ=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

AOT10N60/AOB10N60/AOTF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT10N60 & AOB10N60 & AOTF10N60 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

AOT15S60/AOB15S60/AOTF15S60TM600V 15A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT15S60& AOB15S60 & AOTF15S60 have beenfabricated using the advanced MOSTM high voltage IDM 63Aprocess that is designed to deliver high levels of RDS(ON),max 0.29performance and robustness in switching applications. Qg,typ 16nCBy providing

AOT11C60/AOB11C60/AOTF11C60600V,11A N-Channel MOSFETGeneral Description Product Summary VDS @ Tj,max 700The AOT11C60 & AOB11C60 & AOTF11C60 arefabricated using an advanced high voltage MOSFET IDM 80Aprocess that is designed to deliver high levels of RDS(ON),max

AOT11S65/AOB11S65/AOTF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT11S65 & AOB11S65 & AOTF11S65 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 13.2nCBy provi

AOT13N50/AOTF13N50500V, 13A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT13N50 & AOTF13N50 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 13Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOB12T60P/AOTF12T60P600V,12A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

AOT16N50/AOTF16N50500V, 16A N-Channel MOSFETGeneral Description Product Summary VDS600V@150The AOT16N50 & AOTF16N50 have been fabricatedusing an advanced high voltage MOSFET process that is ID (at VGS=10V) 16Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOTF10N50FD500V, 10A N-Channel MOSFET with Fast Recovery DiodeGeneral Description Product Summary VDS600V@150The AOTF10N50FD has been fabricated using anadvanced high voltage MOSFET process that is designed ID (at VGS=10V) 10Ato deliver high levels of performance and robustness in RDS(ON) (at VGS=10V)

AOTF12T50P500V,12A N-Channel MOSFETGeneral Description Product Summary Latest Trench Power AlphaMOS-II technology VDS @ Tj,max 600V Low RDS(ON) IDM 48A Low Ciss and Crss RDS(ON),max

isc N-Channel MOSFET Transistor AOTF12N65FEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.72(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor AOTF12N50FEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.52(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor AOTF15S65LFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

isc N-Channel MOSFET Transistor AOTF15S60FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

isc N-Channel MOSFET Transistor AOTF10N90FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =0.98(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor AOTF11N70FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSStatic Drain-Source On-Resistance: R = 0.87(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

isc N-Channel MOSFET Transistor AOTF14N50FDFEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.47(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

isc N-Channel MOSFET Transistor AOTF10N65FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

isc N-Channel MOSFET Transistor AOTF11S65FEATURESDrain Current I =11A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

isc N-Channel MOSFET Transistor AOTF12N60FEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor AOTF11N62FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 620V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

isc N-Channel MOSFET Transistor AOTF14N50FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.38(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

isc N-Channel MOSFET Transistor AOTF12N30FEATURESDrain Current I = 11.5A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.42(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

isc N-Channel MOSFET Transistor AOTF11N60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor AOTF190A60LFEATURESWith To-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc N-Channel MOSFET Transistor AOTF11S60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

isc N-Channel MOSFET Transistor AOTF12N60FDFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

isc N-Channel MOSFET Transistor AOTF15S65FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

isc N-Channel MOSFET Transistor AOTF10N60FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor AOTF15S60LFEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

isc N-Channel MOSFET Transistor AOTF13N50FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.51(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

isc N-Channel Mosfet Transistor AOTF16N50FEATURESDrain Current I = 16A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSLow ON Resistance R = 0.37(Max)DS(on)Low leakage currentFast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high efficiency switch mode power supply.ABSOLUTE

isc N-Channel MOSFET Transistor AOTF10N50FDFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

isc N-Channel MOSFET Transistor AOTF12N65LFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.72(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

isc N-Channel MOSFET Transistor AOTF12T50PLFEATURESDrain Current I =12A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONGeneral Lighting for LED and CCFLAC/DC Power suppliesABSOL