AOT462 Datasheet and Replacement
Type Designator: AOT462
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 185 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO220
AOT462 substitution
AOT462 Datasheet (PDF)
aot462.pdf

AOT462N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT462 uses advanced trench technology and VDS (V) = 60Vdesign to provide excellent RDS(ON) with low gate ID = 70A (VGS = 10V)charge. This device is suitable for use in UPS, high RDS(ON)
aot462l.pdf

AOT462L/AOB462L60V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AOT462L/AOB462L combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 35Aprovide extremely low RDS(ON).This device is ideal for RDS(ON) (at VGS=10V)
aot462l.pdf

isc N-Channel MOSFET Transistor AOT462LFEATURESDrain Current I =35A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aot460.pdf

AOT460N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT460/L uses advanced trench technology and VDS (V) = 60Vdesign to provide excellent RDS(ON) with low gate ID = 85 A (VGS = 10V)charge. This device is suitable for use in UPS, high RDS(ON)
Datasheet: AOTF298L , AOTF7S60 , AOTF7S60L , AOT400 , AOT402 , AOT426 , AOT428 , AOT42S60L , IRFB3607 , AOT4S60L , AOT7S60L , AOT7S65L , AOT9N40L , AON2880 , AON3406 , AON3408 , AON3702 .
Keywords - AOT462 MOSFET datasheet
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