Справочник MOSFET. AOT462

 

AOT462 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOT462
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 5.2 ns
   Cossⓘ - Выходная емкость: 185 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
   Тип корпуса: TO220

 Аналог (замена) для AOT462

 

 

AOT462 Datasheet (PDF)

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 aot462.pdf

AOT462 AOT462

AOT462N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT462 uses advanced trench technology and VDS (V) = 60Vdesign to provide excellent RDS(ON) with low gate ID = 70A (VGS = 10V)charge. This device is suitable for use in UPS, high RDS(ON)

 0.1. Size:332K  aosemi
 aot462l.pdf

AOT462 AOT462

AOT462L/AOB462L60V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AOT462L/AOB462L combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 35Aprovide extremely low RDS(ON).This device is ideal for RDS(ON) (at VGS=10V)

 0.2. Size:259K  inchange semiconductor
 aot462l.pdf

AOT462 AOT462

isc N-Channel MOSFET Transistor AOT462LFEATURESDrain Current I =35A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

 9.1. Size:182K  aosemi
 aot460.pdf

AOT462 AOT462

AOT460N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT460/L uses advanced trench technology and VDS (V) = 60Vdesign to provide excellent RDS(ON) with low gate ID = 85 A (VGS = 10V)charge. This device is suitable for use in UPS, high RDS(ON)

 9.2. Size:247K  aosemi
 aot466l.pdf

AOT462 AOT462

AOT466L/AOB466L60V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT466L & AOB466L combines advanced trench 60VMOSFET technology with a low resistance package to 180A ID (at VGS=10V)provide extremely low RDS(ON).This device is ideal for

 9.3. Size:260K  inchange semiconductor
 aot460.pdf

AOT462 AOT462

isc N-Channel MOSFET Transistor AOT460FEATURESDrain Current I =85A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

 9.4. Size:260K  inchange semiconductor
 aot466l.pdf

AOT462 AOT462

isc N-Channel MOSFET Transistor AOT466LFEATURESDrain Current I =180A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FQPF17N08L | WMM028N10HGS | WMM10N70C4

 

 
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