All MOSFET. AOT7S60L Datasheet

 

AOT7S60L Datasheet and Replacement


   Type Designator: AOT7S60L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8.2 nC
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 28 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO220
 

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AOT7S60L Datasheet (PDF)

 ..1. Size:287K  aosemi
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AOT7S60L

AOT7S60/AOB7S60/AOTF7S60TM600V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT7S60 & AOB7S60 & AOTF7S60 have beenfabricated using the advanced MOSTM high voltage IDM 33Aprocess that is designed to deliver high levels of RDS(ON),max 0.6performance and robustness in switching applications. Qg,typ 8.2nCBy providing low R

 7.1. Size:288K  aosemi
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AOT7S60L

AOT7S60/AOB7S60/AOTF7S60TM600V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT7S60 & AOB7S60 & AOTF7S60 have beenfabricated using the advanced MOSTM high voltage IDM 33Aprocess that is designed to deliver high levels of RDS(ON),max 0.6performance and robustness in switching applications. Qg,typ 8.2nCBy providing low R

 7.2. Size:262K  inchange semiconductor
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AOT7S60L

isc N-Channel MOSFET Transistor AOT7S60FEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

 8.1. Size:302K  aosemi
 aot7s65.pdf pdf_icon

AOT7S60L

AOT7S65/AOB7S65/AOTF7S65TM650V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT7S65 & AOB7S65 & AOTF7S65 have beenfabricated using the advanced MOSTM high voltage IDM 30Aprocess that is designed to deliver high levels of RDS(ON),max 0.65performance and robustness in switching applications. Qg,typ 9.2nCBy providing low

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Datasheet: AOTF7S60L , AOT400 , AOT402 , AOT426 , AOT428 , AOT42S60L , AOT462 , AOT4S60L , RFP50N06 , AOT7S65L , AOT9N40L , AON2880 , AON3406 , AON3408 , AON3702 , AON4407 , AON4413 .

Keywords - AOT7S60L MOSFET datasheet

 AOT7S60L cross reference
 AOT7S60L equivalent finder
 AOT7S60L lookup
 AOT7S60L substitution
 AOT7S60L replacement

 

 
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