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AOT7S60L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: AOT7S60L

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 104 W

Предельно допустимое напряжение сток-исток (Uds): 600 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 3.9 V

Максимально допустимый постоянный ток стока (Id): 7 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 13 ns

Выходная емкость (Cd): 28 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.6 Ohm

Тип корпуса: TO220

Аналог (замена) для AOT7S60L

 

 

AOT7S60L Datasheet (PDF)

1.1. aot7s60l.pdf Size:287K _aosemi

AOT7S60L
AOT7S60L

AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6Ω performance and robustness in switching applications. Qg,typ 8.2nC By providing low R

3.1. aot7s60.pdf Size:288K _aosemi

AOT7S60L
AOT7S60L

AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced αMOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6Ω performance and robustness in switching applications. Qg,typ 8.2nC By providing low R

 4.1. aot7s65l.pdf Size:302K _aosemi

AOT7S60L
AOT7S60L

AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced αMOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65Ω performance and robustness in switching applications. Qg,typ 9.2nC By providing low

4.2. aot7s65.pdf Size:302K _aosemi

AOT7S60L
AOT7S60L

AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced αMOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65Ω performance and robustness in switching applications. Qg,typ 9.2nC By providing low

Другие MOSFET... AOTF7S60L , AOT400 , AOT402 , AOT426 , AOT428 , AOT42S60L , AOT462 , AOT4S60L , IRFP260 , AOT7S65L , AOT9N40L , AON2880 , AON3406 , AON3408 , AON3702 , AON4407 , AON4413 .

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