AOT7S60L - описание и поиск аналогов

 

AOT7S60L. Аналоги и основные параметры

Наименование производителя: AOT7S60L

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 104 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 13 ns

Cossⓘ - Выходная емкость: 28 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm

Тип корпуса: TO220

Аналог (замена) для AOT7S60L

- подборⓘ MOSFET транзистора по параметрам

 

AOT7S60L даташит

 ..1. Size:287K  aosemi
 aot7s60l.pdf pdf_icon

AOT7S60L

AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced MOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6 performance and robustness in switching applications. Qg,typ 8.2nC By providing low R

 7.1. Size:288K  aosemi
 aot7s60.pdf pdf_icon

AOT7S60L

AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced MOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6 performance and robustness in switching applications. Qg,typ 8.2nC By providing low R

 7.2. Size:288K  aosemi
 aot7s60 aob7s60 aotf7s60.pdf pdf_icon

AOT7S60L

AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced MOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6 performance and robustness in switching applications. Qg,typ 8.2nC By providing low R

 7.3. Size:262K  inchange semiconductor
 aot7s60.pdf pdf_icon

AOT7S60L

isc N-Channel MOSFET Transistor AOT7S60 FEATURES Drain Current I =7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AOTF7S60L , AOT400 , AOT402 , AOT426 , AOT428 , AOT42S60L , AOT462 , AOT4S60L , AON7410 , AOT7S65L , AOT9N40L , AON2880 , AON3406 , AON3408 , AON3702 , AON4407 , AON4413 .

History: FDB0300N1007L

 

 

 

 

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