AOT7S65L MOSFET Datasheet: N-Ch, 650V, 7A. Full specification with pinout and replacement list

AOT7S65L Specs and Replacement

Type Designator: AOT7S65L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO220

AOT7S65L substitution

- MOSFET ⓘ Cross-Reference Search

AOT7S65L datasheet

..1. Size:302K aosemi
aot7s65l.pdf pdf_icon

AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low ... See More ⇒

..2. Size:255K inchange semiconductor
aot7s65l.pdf pdf_icon

isc N-Channel MOSFET Transistor AOT7S65L FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R =0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

7.1. Size:302K aosemi
aot7s65.pdf pdf_icon