Справочник MOSFET. AOT7S65L

 

AOT7S65L Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AOT7S65L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 104 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 30 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.65 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

AOT7S65L Datasheet (PDF)

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AOT7S65L

AOT7S65/AOB7S65/AOTF7S65TM650V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT7S65 & AOB7S65 & AOTF7S65 have beenfabricated using the advanced MOSTM high voltage IDM 30Aprocess that is designed to deliver high levels of RDS(ON),max 0.65performance and robustness in switching applications. Qg,typ 9.2nCBy providing low

 ..2. Size:255K  inchange semiconductor
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AOT7S65L

isc N-Channel MOSFET Transistor AOT7S65LFEATURESDrain Current I = 7.0A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 7.1. Size:302K  aosemi
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AOT7S65L

AOT7S65/AOB7S65/AOTF7S65TM650V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT7S65 & AOB7S65 & AOTF7S65 have beenfabricated using the advanced MOSTM high voltage IDM 30Aprocess that is designed to deliver high levels of RDS(ON),max 0.65performance and robustness in switching applications. Qg,typ 9.2nCBy providing low

 8.1. Size:288K  aosemi
 aot7s60.pdf pdf_icon

AOT7S65L

AOT7S60/AOB7S60/AOTF7S60TM600V 7A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT7S60 & AOB7S60 & AOTF7S60 have beenfabricated using the advanced MOSTM high voltage IDM 33Aprocess that is designed to deliver high levels of RDS(ON),max 0.6performance and robustness in switching applications. Qg,typ 8.2nCBy providing low R

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