AOT7S65L - описание и поиск аналогов

AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low

isc N-Channel MOSFET Transistor AOT7S65L FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R =0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low

AOT7S65/AOB7S65/AOTF7S65 TM 650V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced MOSTM high voltage IDM 30A process that is designed to deliver high levels of RDS(ON),max 0.65 performance and robustness in switching applications. Qg,typ 9.2nC By providing low

AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced MOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6 performance and robustness in switching applications. Qg,typ 8.2nC By providing low R

AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced MOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6 performance and robustness in switching applications. Qg,typ 8.2nC By providing low R

AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced MOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6 performance and robustness in switching applications. Qg,typ 8.2nC By providing low R

isc N-Channel MOSFET Transistor AOT7S60 FEATURES Drain Current I =7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a