AON4413 MOSFET Datasheet: P-Ch, 30V, 4.7A. Full specification with pinout and replacement list

AON4413 Specs and Replacement

Type Designator: AON4413

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V

Qg ⓘ - Total Gate Charge: 12.7 nC

tr ⓘ - Rise Time: 6.8 nS

Cossⓘ - Output Capacitance: 126 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: DFN3X2

AON4413 substitution

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AON4413 datasheet

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AON4413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4413 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON) with low gate charge. This ID = -6.5A (VGS = -10V) device is suitable for use as a load switch or in PWM RDS(ON) ... See More ⇒

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AON4420L N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30V RDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V) and high speed switching applications. RDS(ON) ... See More ⇒

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AON4421 P-Channel Enhancement Mode Field Effect Transistor General Description Product Summary VDS -30V The AON4421 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -8A device is suitable for use as a load switch. RDS(ON) (at VGS=-10V) ... See More ⇒

9.3. Size:147K aosemi
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