AON4413 - Даташиты. Аналоги. Основные параметры

AON4413P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4413 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON) with low gate charge. This ID = -6.5A (VGS = -10V)device is suitable for use as a load switch or in PWM RDS(ON)

AON4420LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30VRDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V)and high speed switching applications.RDS(ON)

AON4421P-Channel Enhancement Mode Field Effect Transistor General Description Product SummaryVDS -30VThe AON4421 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -8Adevice is suitable for use as a load switch. RDS(ON) (at VGS=-10V)

AON4420LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4420L combines advanced trench MOSFET technology with a small footprint package to provide low VDS (V) = 30VRDS(ON) per unit area. This device is ideal for load switch ID = 10A (VGS = 10V)and high speed switching applications.RDS(ON)

AON440712V P-Channel MOSFETGeneral Description FeaturesThe AON4407 uses advanced trench technology to VDS (V) = -12Vprovide excellent RDS(ON), low gate charge and operationID = -9 A (VGS = -4.5V)with gate voltages as low as 1.8V. This device is suitableRDS(ON)