AON6200 MOSFET Datasheet: N-Ch, 30V, 24A. Full specification with pinout and replacement list

AON6200 Specs and Replacement

Type Designator: AON6200

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2 nS

Cossⓘ - Output Capacitance: 490 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm

Package: DFN5X6

AON6200 substitution

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AON6200 datasheet

..1. Size:311K aosemi
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AON6200 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance. Conduction and RDS(ON) (at VGS=10V) ... See More ⇒

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AON6206 30V N-Channel MOSFET General Description Product Summary VDS The AON6206 uses trench MOSFET technology that is 30V 24A uniquely optimized to provide the most efficient high ID (at VGS=10V) frequency switching performance.Power losses are ... See More ⇒

8.2. Size:257K aosemi
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AON6204 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6204 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) ... See More ⇒

8.3. Size:236K aosemi
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AON6202 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6202 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 24A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AON6912 , AON6932 , AON6934 , AON6974 , AON7202 , AON7422L , AON7514 , AON7702 , STP65NF06 , AON6206 , AON6408 , AON6410 , AON6414 , AON6414AL , AON6418 , AON6422 , AON6454 .