AON6514 PDF and Equivalents Search

 

AON6514 Specs and Replacement

Type Designator: AON6514

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 373 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: DFN5X6

AON6514 substitution

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AON6514 datasheet

 ..1. Size:295K  aosemi
aon6514.pdf pdf_icon

AON6514

AON6514 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 30A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.1. Size:282K  1
aon6512.pdf pdf_icon

AON6514

AON6512 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 150A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.2. Size:282K  aosemi
aon6512.pdf pdf_icon

AON6514

AON6512 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 150A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 8.3. Size:291K  aosemi
aon6510.pdf pdf_icon

AON6514

AON6510 30V N-Channel AlphaMOS General Description Product Summary VDS Trench Power AlphaMOS ( MOS LV) technology 30V Low RDS(ON) ID (at VGS=10V) 32A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AON6206, AON6408, AON6410, AON6414, AON6414AL, AON6418, AON6422, AON6454, AON7403, AON6534, AON6542, AON6702, AON6704A, AON6708, AON6710, AON6712, AON6716

Keywords - AON6514 MOSFET specs

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