AON6708 Specs and Replacement
Type Designator: AON6708
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 62 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ -
Output Capacitance: 756 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0047 Ohm
Package: DFN5X6
- MOSFET ⓘ Cross-Reference Search
AON6708 datasheet
..1. Size:155K aosemi
aon6708.pdf 
AON6708 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS (V) = 30V SRFETTM The AON6708 uses advanced trench ID = 30A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate RDS(ON) ... See More ⇒
8.1. Size:269K aosemi
aon6702.pdf
AON6702 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6702 uses advanced trench technology ID (at VGS=10V) 85A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V) ... See More ⇒
8.2. Size:257K aosemi
aon6704a.pdf
AON6704A 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6704A uses advanced trench technology 85A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ... See More ⇒
9.1. Size:268K 1
aon6786.pdf
AON6786 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6786 uses advanced trench technology ID (at VGS=10V) 85A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V) ... See More ⇒
9.2. Size:262K 1
aon6790.pdf
AON6790 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6790 uses advanced trench technology 68A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ... See More ⇒
9.3. Size:331K aosemi
aon6792.pdf
AON6792 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.4. Size:301K aosemi
aon6774.pdf
AON6774 30V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS LV) technology 30V Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V) ... See More ⇒
9.5. Size:243K aosemi
aon6794.pdf
AON6794 30V N-Channel SRFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.6. Size:153K aosemi
aon6718l.pdf
AON6718L N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AON6718L uses advanced trench technology VDS (V) = 30V with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ID = 80A (VGS = 10V) ideally suited for use as a low side switch in CPU core RDS(ON) ... See More ⇒
9.7. Size:354K aosemi
aon6734.pdf
AON6734 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.8. Size:279K aosemi
aon6716.pdf
AON6716 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6716 uses advanced trench technology ID (at VGS=10V) 85A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V) ... See More ⇒
9.9. Size:313K aosemi
aon6760.pdf
AON6760 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 36A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V) ... See More ⇒
9.10. Size:268K aosemi
aon6788.pdf
AON6788 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6788 uses advanced trench technology ID (at VGS=10V) 80A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V) ... See More ⇒
9.11. Size:133K aosemi
aon6712.pdf
AON6712 30V N-Channel MOSFET SRFET TM General Description Product Summary The AON6712 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge.This ID = 20A (VGS = 10V) device is suitable for use as a high side switch in RDS(ON) ... See More ⇒
9.12. Size:340K aosemi
aon6756.pdf
AON6756 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 36A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V) ... See More ⇒
9.13. Size:287K aosemi
aon6754.pdf
AON6754 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V) ... See More ⇒
9.14. Size:293K aosemi
aon6758.pdf
AON6758 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 32A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V) ... See More ⇒
9.15. Size:256K aosemi
aon6780.pdf
AON6780 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6780 uses advanced trench technology 85A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ... See More ⇒
9.16. Size:290K aosemi
aon6752.pdf
AON6752 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V) ... See More ⇒
9.17. Size:345K aosemi
aon6796.pdf
AON6796 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.18. Size:242K aosemi
aon6764.pdf
AON6764 30V N-Channel SRFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.19. Size:128K aosemi
aon6710.pdf
AON6710 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS (V) = 30V SRFETTM The AON6710 uses advanced trench ID = 20A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate RDS(ON) ... See More ⇒
9.20. Size:255K aosemi
aon6782.pdf
AON6782 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6782 uses advanced trench technology 85A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ... See More ⇒
Detailed specifications: AON6418, AON6422, AON6454, AON6514, AON6534, AON6542, AON6702, AON6704A, AOD4184A, AON6710, AON6712, AON6716, 2SK0601, 2SK0615, 2SK066400L, 2SK0664G0L, 2SK066500L
Keywords - AON6708 MOSFET specs
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